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VP0300LS PDF预览

VP0300LS

更新时间: 2024-02-28 19:18:33
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
4页 44K
描述
P-Channel 30-V (D-S) MOSFETs

VP0300LS 技术参数

生命周期:Obsolete零件包装代码:TO-237AA
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.63
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):0.5 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):60 pF
JEDEC-95代码:TO-237AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

VP0300LS 数据手册

 浏览型号VP0300LS的Datasheet PDF文件第2页浏览型号VP0300LS的Datasheet PDF文件第3页浏览型号VP0300LS的Datasheet PDF文件第4页 
VP0300L/LS, VQ2001J/P  
Vishay Siliconix  
P-Channel 30-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number  
V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
VP0300L  
VP0300LS  
VQ2001J  
VQ2001P  
2.5 @ V = –12 V  
–2 to –4.5  
–2 to –4.5  
–2 to –4.5  
–2 to –4.5  
–0.32  
–0.5  
–0.6  
–0.6  
GS  
2.5 @ V = –12 V  
GS  
–30  
2 @ V = –12 V  
GS  
2 @ V = –12 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D High-Side Switching  
D Ease in Driving Switches  
D Low Offset (Error) Voltage  
D Low-Voltage Operation  
D High-Speed Switching  
D Drivers: Relays, Solenoids, Lamps, Hammers,  
Displays, Memories, Transistors, etc.  
D Low On-Resistance: 1.5 W  
D Moderate Threshold: –3.1 V  
D Fast Switching Speed: 17 ns  
D Low Input Capacitance: 60 pF  
D Battery Operated Systems  
D Power Supply, Converter Circuits  
D Motor Control  
D Easily Driven Without Buffer  
TO-226AA  
(TO-92)  
Dual-In-Line  
TO-92S  
(Copper Lead Frame)  
D
S
D
S
1
1
1
4
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
1
P
P
P
P
4
S
1
S
G
G
4
G
D
2
3
NC  
NC  
G
D
2
3
G
2
S
2
D
2
G
3
3
S
D
3
8
Top View  
VP0300L  
Top View  
VP0300LS  
Top View  
Plastic: VQ2001J  
Sidebraze: VQ2001P  
For device marking, see the last page of this data sheet.  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
VQ2001J/P  
Single Total Quad  
Parameter  
Symbol  
VP0300L  
VP0300LS  
Unit  
Drain-Source Voltage  
V
–30  
"20  
–0.32  
–0.2  
–2.4  
0.8  
–30  
"20  
–0.5  
–0.32  
–3  
–30  
"20  
–0.6  
–0.37  
–2  
–30  
"20  
–0.6  
–0.37  
–2  
DS  
GS  
V
Gate-Source Voltage  
V
T = 25_C  
A
A
Continuous Drain Current  
I
D
(T = 150_C)  
Pulsed Drain Current  
J
T = 100_C  
A
a
I
DM  
T = 25_C  
0.9  
1.3  
2
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
0.4  
0.52  
96  
0.8  
A
Thermal Resistance, Junction-to-Ambient  
R
thJA  
139  
62.5  
_C/W  
_C  
Operating Junction and  
Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
For applications information see AN804.  
Document Number: 70217  
S-04279—Rev. E, 16-Jul-01  
www.vishay.com  
11-1  

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