Datasheet > 晶体管 > 功率场效应晶体管> VNS3NV04PTR-E

VNS3NV04PTR-E

更新时间： 2024-11-14 17:33:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
26页	490K
描述
OMNIFET II全自动保护功率MOSFET

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中文翻译

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数据手册

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VNS3NV04PTR-E 数据手册

VNN3NV04, VNS3NV04

VND3NV04, VND3NV04-1

OMNIFET II

fully autoprotected Power MOSFET

Features

Type

R_DS(on)

I_lim

V_clamp

VNN3NV04

VNS3NV04

VND3NV04

VND3NV04-1

SOT-223

SO-8

120 mΩ

3.5 A

40 V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

TO251 (IPAK)

TO252 (DPAK)

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

Description

The VNN3NV04, VNS3NV04, VND3NV04

VND3NV04-1, are monolithic devices designed in

STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 kHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

■ Direct access to the gate of the Power

MOSFET (analog driving)

■ Compatible with standard Power MOSFET in

compliance with the 2002/95/EC European

Directive

Fault feedback can be detected by monitoring the

voltage at the input pin.

Table 1.

Package

Device summary

Tube

Order codes

Tube (lead-free)

Tape and reel

Tape and reel (lead-free)

SOT-223

SO-8

VNN3NV04

VNS3NV04

VND3NV04

VND3NV04-1

VNN3NV0413TR

VNS3NV0413TR

VND3NV0413TR

TO-252

TO-251

VND3NV04-E

VND3NV04-1-E

VND3NV04TR-E

April 2009

Doc ID 7382 Rev 2

1/26

www.st.com

12 3 4 5 6 7...26

中文翻译

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