品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
14页 | 243K | |
描述 | ||
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SO-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e0 |
长度: | 4.9 mm | 功能数量: | 2 |
端子数量: | 8 | 输出电流流向: | SINK |
标称输出峰值电流: | 5 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 10 µs | 接通时间: | 1.35 µs |
宽度: | 3.9 mm |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VNS3NV04D13TR | STMICROELECTRONICS |
完全替代 |
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET | |
VNS3NV04DP-E | STMICROELECTRONICS |
完全替代 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS3NV04 | STMICROELECTRONICS |
功能相似 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE |
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VNS3NV04D13TR | STMICROELECTRONICS |
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VNS7NV0413TR | STMICROELECTRONICS |
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VNS7NV04P-E | STMICROELECTRONICS |
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OMNIFET II - 全自动保护功率MOSFET |