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VNS1NV04PTR-E PDF预览

VNS1NV04PTR-E

更新时间: 2024-11-13 12:47:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
28页 416K
描述
OMNIFET II fully autoprotected Power MOSFET

VNS1NV04PTR-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:SOP,
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:1.22
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:3功能数量:1
端子数量:8输出电流流向:SINK
标称输出峰值电流:1.7 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.75 mm
标称供电电压:5 V表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:5.5 µs
接通时间:1 µs宽度:3.9 mm
Base Number Matches:1

VNS1NV04PTR-E 数据手册

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VNN1NV04P-E, VNS1NV04P-E  
OMNIFET II  
fully autoprotected Power MOSFET  
Features  
Parameter  
Symbol Value  
2
Max on-state resistance (per ch.)  
Current limitation (typ)  
RON  
ILIMH  
250 mΩ  
1.7 A  
3
2
1
Drain-source clamp voltage  
VCLAMP  
40 V  
SOT-223  
SO-8  
Linear current limitation  
Thermal shutdown  
Short circuit protection  
Integrated clamp  
Description  
Low current drawn from input pin  
Diagnostic feedback through input pin  
ESD protection  
The VNN1NV04P-E, VNS1NV04P-E are  
monolithic devices designed in  
STMicroelectronics VIPower M0-3 Technology,  
intended for replacement of standard Power  
MOSFETs from DC up to 50 kHz applications.  
Built in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments.  
Direct access to the gate of the Power  
MOSFET (analog driving)  
Compatible with standard Power MOSFET  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
Table 1.  
Device summary  
Order codes  
Package  
Tube  
Tape and reel  
SOT-223 VNN1NV04P-E VNN1NV04PTR-E  
SO-8  
VNS1NV04P-E VNS1NV04PTR-E  
October 2009  
Doc ID 15586 Rev 2  
1/28  
www.st.com  
28  
 

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