是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOIC | 包装说明: | , |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 18 weeks | 风险等级: | 1.22 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 216199 | Samacsys Pin Count: | 8 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | Small Outline Packages |
Samacsys Footprint Name: | SO-8 | Samacsys Released Date: | 2015-06-10 20:29:16 |
Is Samacsys: | N | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e6 |
湿度敏感等级: | 3 | 端子数量: | 8 |
输出电流流向: | SINK | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Tin/Silver/Bismuth (Sn/Ag/Bi) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VNS1NV04DP-E | STMICROELECTRONICS |
类似代替 |
OMNIFET II fully autoprotected Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VNS1NV04P-E | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VNS1NV04PTR-E | STMICROELECTRONICS |
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VNS1NV04TR | STMICROELECTRONICS |
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VNS3NV04 | STMICROELECTRONICS |
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VNS3NV0413TR | STMICROELECTRONICS |
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VNS3NV04D | STMICROELECTRONICS |
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“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VNS3NV04D13TR | STMICROELECTRONICS |
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OMNIFET II FULLY AUTOPROTECTED POWER MOSFET | |
VNS3NV04D-E | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VNS3NV04DP-E | STMICROELECTRONICS |
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VNS3NV04DPTR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET |