是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | SOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.8 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
驱动器位数: | 1 | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
长度: | 4.9 mm | 功能数量: | 1 |
端子数量: | 8 | 输出电流流向: | SINK |
最大输出电流: | 0.5 A | 标称输出峰值电流: | 1.7 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
子类别: | Peripheral Drivers | 表面贴装: | YES |
技术: | MOS | 端子面层: | NICKEL PALLADIUM GOLD |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 5.5 µs | 接通时间: | 1 µs |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VNS1NV04D | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VNS1NV04D13TR | ETC |
获取价格 |
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | SO | |
VNS1NV04D-E | STMICROELECTRONICS |
获取价格 |
âOMNIFET IIâ: FULLY AUTOPROTECTED POWER M | |
VNS1NV04DP-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS1NV04DPTR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS1NV04P-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS1NV04PTR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS1NV04TR | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VNS3NV04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VNS3NV0413TR | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET |