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VNQ830M13TR PDF预览

VNQ830M13TR

更新时间： 2024-09-24 22:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动器接口集成电路光电二极管
页数 文件大小 规格书
20页 317K
描述
QUAD CHANNEL HIGH SIDE DRIVER

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中文翻译

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VNQ830M13TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：ROHS COMPLIANT, SO-28针数：28
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.83
Is Samacsys：N内置保护：TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数：4接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G28JESD-609代码：e4
长度：17.9 mm湿度敏感等级：3
功能数量：2端子数量：28
输出电流流向：SINK最大输出电流：2 A
标称输出峰值电流：10.5 A封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP28,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：13 V
认证状态：Not Qualified座面最大高度：2.65 mm
子类别：Peripheral Drivers最大供电电压：36 V
最小供电电压：5.5 V标称供电电压：13 V
表面贴装：YES端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.5 mmBase Number Matches：1

VNQ830M13TR 数据手册

 浏览型号VNQ830M13TR的Datasheet PDF文件第2页浏览型号VNQ830M13TR的Datasheet PDF文件第3页浏览型号VNQ830M13TR的Datasheet PDF文件第4页浏览型号VNQ830M13TR的Datasheet PDF文件第5页浏览型号VNQ830M13TR的Datasheet PDF文件第6页浏览型号VNQ830M13TR的Datasheet PDF文件第7页 
®
VNQ830M  
QUAD CHANNEL HIGH SIDE DRIVER  
TYPE  
R
I
V
CC  
DS(on)  
OUT  
VNQ830M  
60 mΩ (*)  
6 A (*)  
36 V  
(*) Per each channel  
■ CMOS COMPATIBLE INPUTS  
■ OPEN DRAIN STATUS OUTPUTS  
■ ON STATE OPEN LOAD DETECTION  
■ OFF STATE OPEN LOAD DETECTION  
■ SHORTED LOAD PROTECTION  
■ UNDERVOLTAGE AND OVERVOLTAGE  
SHUTDOWN  
SO-28 (DOUBLE ISLAND)  
ORDER CODES  
PACKAGE  
TUBE  
T&R  
■ LOSS OF GROUND PROTECTION  
■ VERY LOW STAND-BY CURRENT  
■ REVERSE BATTERY PROTECTION (**)  
VNQ830M VNQ830M13TR  
SO-28  
against low energy spikes (see ISO7637 transient  
compatibility table). Active current limitation  
combined with thermal shutdown and automatic  
restart protects the device against overload.  
The device detects open load condition both in on  
and off state. The openload threshold is aimed at  
detecting the 5W/12V standard bulb as an  
openload fault in the on state. Output shorted to  
VCC is detected in the off state. Device  
automatically turns off in case of ground pin  
disconnection.  
DESCRIPTION  
The VNQ830M is a quad HSD formed by  
assembling two VND830M chips in the same SO-  
28 package. The VND830M is a monolithic device  
made by using| STMicroelectronics VIPower M0-  
3 Technology. The VNQ830M is intended for  
driving any type of multiple loads with one side  
connected to ground.  
Active VCC pin voltage clamp protects the device  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
Unit  
V
V
DC Supply Voltage  
41  
- 0.3  
CC  
- V  
Reverse DC Supply Voltage  
V
CC  
GND  
OUT  
- I  
DC Reverse Ground Pin Current  
- 200  
mA  
A
I
DC Output Current  
Internally Limited  
- 6  
- I  
Reverse DC Output Current  
A
OUT  
I
DC Input Current  
+/- 10  
mA  
mA  
IN  
I
DC Status Current  
+/- 10  
STAT  
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
4000  
5000  
5000  
6.25  
V
V
V
- STATUS  
- OUTPUT  
ESD  
V
- V  
V
CC  
P
Power Dissipation T =25°C  
W
tot  
pins  
Maximum Switching Energy  
E
77  
mJ  
MAX  
(L=1mH; R =0Ω; V =13.5V; T  
=150ºC; I =10.5A)  
L
L
bat  
jstart  
T
Junction Operating Temperature  
Storage Temperature  
Internally Limited  
- 55 to 150  
°C  
°C  
j
T
stg  
(**) See application schematic at page 9  
January 2003  
1/20  
1234567...20

中文翻译

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VNQ830M13TR 替代型号

型号 品牌 替代类型 描述 数据表
VNQ830M STMICROELECTRONICS

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