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VNQ830M-E PDF预览

VNQ830M-E

更新时间: 2024-09-25 12:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
20页 310K
描述
10.5A 4 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO28, SO-28

VNQ830M-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SO-28针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.64
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:4
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G28
JESD-609代码:e4长度:17.9 mm
湿度敏感等级:3功能数量:4
端子数量:28输出电流流向:SOURCE
最大输出电流:2 A标称输出峰值电流:10.5 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP28,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):250
电源:13 V认证状态:Not Qualified
座面最大高度:2.65 mm子类别:Peripheral Drivers
最大供电电压:36 V最小供电电压:5.5 V
标称供电电压:13 V表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.5 mm
Base Number Matches:1

VNQ830M-E 数据手册

 浏览型号VNQ830M-E的Datasheet PDF文件第2页浏览型号VNQ830M-E的Datasheet PDF文件第3页浏览型号VNQ830M-E的Datasheet PDF文件第4页浏览型号VNQ830M-E的Datasheet PDF文件第5页浏览型号VNQ830M-E的Datasheet PDF文件第6页浏览型号VNQ830M-E的Datasheet PDF文件第7页 
®
VNQ830  
QUAD CHANNEL HIGH SIDE DRIVER  
TYPE  
R
I
V
CC  
DS(on)  
OUT  
VNQ830  
65 m(*)  
6 A (*)  
36 V  
(*) Per each channel  
CMOS COMPATIBLE INPUTS  
OPEN DRAIN STATUS OUTPUTS  
ON STATE OPEN LOAD DETECTION  
OFF STATE OPEN LOAD DETECTION  
SHORTED LOAD PROTECTION  
UNDERVOLTAGE AND OVERVOLTAGE  
SHUTDOWN  
LOSS OF GROUND PROTECTION  
VERY LOW STAND-BY CURRENT  
REVERSE BATTERY PROTECTION (**)  
SO-28 (DOUBLE ISLAND)  
ORDER CODES  
PACKAGE  
TUBE  
T&R  
VNQ830  
VNQ83013TR  
SO-28  
DESCRIPTION  
against low energy spikes (see ISO7637 transient  
compatibility table). Active current limitation  
combined with thermal shutdown and automatic  
restart protects the device against overload.  
The device detects open load condition both in on  
and off state. Output shorted to VCC is detected in  
the off state. Device automatically turns off in case  
of ground pin disconnection.  
The VNQ830 is  
a quad HSD formed by  
assembling two VND830 chips in the same SO-28  
package. The VND830 is a monolithic device  
made by using| STMicroelectronics VIPower M0-3  
Technology. The VNQ830 is intended for driving  
any type of multiple loads with one side connected  
to ground.  
Active VCC pin voltage clamp protects the device  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
Unit  
V
V
DC Supply Voltage  
41  
- 0.3  
CC  
- V  
Reverse DC Supply Voltage  
V
CC  
GND  
OUT  
- I  
DC Reverse Ground Pin Current  
- 200  
mA  
A
I
DC Output Current  
Internally Limited  
- 6  
- I  
Reverse DC Output Current  
A
OUT  
I
DC Input Current  
+/- 10  
mA  
mA  
IN  
I
DC Status Current  
+/- 10  
STAT  
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
4000  
5000  
5000  
V
V
V
V
V
- STATUS  
- OUTPUT  
ESD  
- V  
CC  
Maximum Switching Energy  
(L=1.5mH; R =0; V =13.5V; T  
E
85  
mJ  
MAX  
=150ºC; I =9A)  
L
bat  
jstart  
L
P
Power dissipation (per island) at T  
Junction Operating Temperature  
Storage Temperature  
=25°C  
6.25  
W
°C  
°C  
tot  
lead  
T
Internally Limited  
- 55 to 150  
j
T
stg  
(**) See application schematic at page 9  
January 2003  
1/20  

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