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VNQ660 PDF预览

VNQ660

更新时间: 2024-11-12 22:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 继电器固态继电器
页数 文件大小 规格书
16页 239K
描述
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

VNQ660 数据手册

 浏览型号VNQ660的Datasheet PDF文件第2页浏览型号VNQ660的Datasheet PDF文件第3页浏览型号VNQ660的Datasheet PDF文件第4页浏览型号VNQ660的Datasheet PDF文件第5页浏览型号VNQ660的Datasheet PDF文件第6页浏览型号VNQ660的Datasheet PDF文件第7页 
®
VNQ660SP  
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY  
TYPE  
R
I
V
CC  
DS(on)  
OUT  
VNQ660SP  
50m(*)  
6A  
36 V  
(*) Per each channel  
OUTPUT CURRENT PER CHANNEL: 6A  
CMOS COMPATIBLE INPUTS  
OPEN LOAD DETECTION (OFF STATE)  
UNDERVOLTAGE & OVERVOLTAGE  
SHUT- DOWN  
10  
1
PowerSO-10  
OVERVOLTAGE CLAMP  
THERMAL SHUT-DOWN  
ORDER CODES  
TUBE  
CURRENT LIMITATION  
PACKAGE  
T&R  
VERY LOW STAND-BY POWER DISSIPATION  
PROTECTION AGAINST:  
VNQ660SP  
VNQ660SP13TR  
PowerSO-10  
LOSS OF GROUND & LOSS OF VCC  
REVERSE BATTERY PROTECTION (**)  
Technology, intended for driving resistive or  
inductive loads with one side connected to ground.  
This device has four independent channels. Built-  
in thermal shut down and output current limitation  
protect the chip from over temperature and short  
circuit.  
DESCRIPTION  
The VNQ660SP is a monolithic device made by  
using|  
STMicroelectronics  
VIPower  
M0-3  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
Unit  
V
V
Supply voltage (continuous)  
Reverse supply voltage (continuous)  
41  
-0.3  
CC  
-V  
V
CC  
I
Output current (continuous), per each channel  
Reverse output current (continuous), per each channel  
Input current  
Internally limited  
-15  
A
OUT  
I
A
R
I
+/- 10  
mA  
mA  
mA  
IN  
I
Status current  
+/- 10  
STAT  
I
Ground current at T <25°C (continuous)  
-200  
GND  
C
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
4000  
V
V
V
- STATUS  
- OUTPUT  
ESD  
5000  
V
- V  
5000  
V
CC  
P
Power dissipation at T =25°C  
113.6  
W
°C  
°C  
mJ  
tot  
C
T
Junction operating temperature  
Storage temperature  
-40 to 150  
-65 to 150  
150  
j
T
stg  
E
Non repetitive clamping energy at T =25°C  
C
C
(**) See application schematic at page 8  
July 2003  
1/16  

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