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VNQ600ATR PDF预览

VNQ600ATR

更新时间: 2024-11-12 22:15:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 继电器固态继电器
页数 文件大小 规格书
18页 341K
描述
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

VNQ600ATR 数据手册

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VNQ600A(8960)  
®
P
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY  
TYPE  
R
(*)  
I
V
CC  
DS(on)  
lim  
VNQ600A(8960)  
30mΩ  
25A  
36 V  
(*) Per each channel at V =13V  
CC  
DC SHORT CIRCUIT CURRENT: 25A  
CMOS COMPATIBLE INPUTS  
PROPORTIONAL LOAD CURRENT SENSE  
UNDERVOLTAGE & OVERVOLTAGE  
SHUT-DOWN  
SO-28 (DOUBLE ISLAND)  
ORDER CODES  
PACKAGE  
SO-28  
TUBE  
T&R  
VNQ600A(8960) VNQ600A(8960)TR  
OVERVOLTAGE CLAMP  
THERMAL SHUT-DOWN  
package. The VND600 is a monolithic device  
designed in| STMicroelectronics VIPower M0-3  
Technology. The VNQ600A(8960) is intended for  
driving any type of multiple loads with one side  
connected to ground. This device has four  
independent channels and four analog sense  
outputs which deliver currents proportional to the  
outputs currents. Active current limitation  
combined with thermal shut-down and automatic  
restart protect the device against overload. Device  
automatically turns off in case of ground pin  
disconnection.  
CURRENT LIMITATION  
VERY LOW STAND-BY POWER DISSIPATION  
PROTECTION AGAINST:  
LOSS OF GROUND & LOSS OF VCC  
REVERSE BATTERY PROTECTION (**)  
DESCRIPTION  
The VNQ600A(8960) is a quad HSD formed by  
assembling two VND600 chips in the same SO-28  
ABSOLUTE MAXIMUM RATING  
Symbol  
Parameter  
Value  
41  
Unit  
V
V
Supply voltage (continuous)  
CC  
-V  
Reverse supply voltage (continuous)  
Output current (continuous), for each channel  
Reverse output current (continuous), for each channel  
Input current  
-0.3  
15  
V
CC  
I
A
OUT  
I
-15  
A
R
I
+/- 10  
-3  
mA  
V
IN  
V
Current sense maximum voltage  
CSENSE  
+15  
-200  
V
I
Ground current at T  
< 25°C (continuous)  
mA  
GND  
pins  
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)  
- INPUT  
4000  
2000  
5000  
5000  
V
V
V
V
V
- CURRENT SENSE  
- OUTPUT  
ESD  
- V  
CC  
Maximum Switching Energy  
(L=0.11mH; R =0; V =13.5V; T  
E
126  
mJ  
MAX  
=150ºC; I =40A)  
L
bat  
jstart  
L
P
Power dissipation (per island) at T  
Junction operating temperature  
Storage temperature  
=25°C  
lead  
6.25  
W
°C  
°C  
tot  
T
Internally Limited  
-55 to 150  
j
T
stg  
(**) See application schematic at page 9.  
June 2003  
1/18  

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