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VNP20N07FI PDF预览

VNP20N07FI

更新时间: 2024-01-04 14:52:22
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路局域网
页数 文件大小 规格书
13页 154K
描述
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

VNP20N07FI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SFM包装说明:ISOWATT220-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.66Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; THERMAL输入特性:SCHMITT TRIGGER
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T3
JESD-609代码:e3功能数量:1
端子数量:3输出特性:OPEN-DRAIN
输出电流流向:SINK标称输出峰值电流:20 A
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
表面贴装:NO技术:MOS
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:10 µs接通时间:1.2 µs
Base Number Matches:1

VNP20N07FI 数据手册

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VNP20N07FI  
VNB20N07/VNV20N07  
”OMNIFET”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
Vclamp  
RDS(on)  
Ilim  
VNP20N07FI  
VNB20N07  
VNV20N07  
70 V  
70 V  
70 V  
0.05 Ω  
0.05 Ω  
0.05 Ω  
20 A  
20 A  
20 A  
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
ISOWATT220  
3
2
1
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
10  
3
1
1
D2PAK  
TO-263  
PowerSO-10  
DESCRIPTION  
The VNP20N07FI, VNB20N07 and VNV20N07  
are  
monolithic  
devices  
made  
using  
STMicroelectronics VlPower M0 Technology,  
intended for replacement of standard power  
MOSFETS in DC to 50 KHz applications. Built-in  
thermal shut-down, linear current limitation and  
overvoltage clamp protect the chip in harsh  
enviroments.  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
BLOCK DIAGRAM ( )  
( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB  
June 1998  
1/13  

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