是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SOT-223 | 包装说明: | SOP, |
针数: | 5 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
Factory Lead Time: | 20 weeks | 风险等级: | 1.7 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PDSO-G5 |
JESD-609代码: | e3 | 长度: | 6.5 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 5 | 输出电流流向: | SINK |
标称输出峰值电流: | 9 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.8 mm |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 2.3 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 16 µs | 接通时间: | 2.3 µs |
宽度: | 3.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
VNN7NV04_10 | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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VNN7NV0413TR | STMICROELECTRONICS | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE |
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VNN7NV04P-E | STMICROELECTRONICS | OMNIFET II - 全自动保护功率MOSFET |
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VNN7NV04PTR-E | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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|
VNP10N06 | STMICROELECTRONICS | ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET |
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VNP10N06FI | STMICROELECTRONICS | ISO HIGH SIDE SMART POWER SOLID STATE RELAY |
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