VNN1NV04TR

更新时间： 2024-02-12 19:43:01

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
33页	535K
描述
OMNIFET II fully autoprotected Power MOSFET

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数据手册

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VNN1NV04TR 数据手册

VND1NV04

VNN1NV04 - VNS1NV04

OMNIFET II

fully autoprotected Power MOSFET

Features

Parameter

Symbol Value

Max on-state resistance (per ch.)

Current limitation (typ)

R_ON

I_LIMH

250 mΩ

1.7 A

TO-252 (DPAK)

Drain-source clamp voltage

V_CLAMP

40 V

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

SOT-223

SO-8

Description

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

The VND1NV04, VNN1NV04, VNS1NV04 are

monolithic devices designed in

STMicroelectronics VIPower M0-3 Technology,

intended for replacement of standard Power

MOSFETs from DC up to 50 KHz applications.

Built in thermal shutdown, linear current limitation

and overvoltage clamp protect the chip in harsh

environments.

■ Direct access to the gate of the Power

MOSFET (analog driving)

■ Compatible with standard Power MOSFET

Fault feedback can be detected by monitoring the

voltage at the input pin.

Table 1.

Device summary

Order codes

Package

Tube

Tube (lead free)

Tape and reel

Tape and reel (lead free)

TO-252 (DPAK)

SOT-223

VND1NV04

VNN1NV04

VNS1NV04

VND1NV04-E

VND1NV04TR

VNN1NV04TR

VNS1NV04TR

VND1NV04TR-E

SO-8

April 2009

Doc ID 7381 Rev 2

1/33

www.st.com

12 3 4 5 6 7...33

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