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VNLD5090-E PDF预览

VNLD5090-E

更新时间: 2024-10-30 14:58:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动驱动器
页数 文件大小 规格书
20页 538K
描述
OMNIFET III全保护下桥臂驱动器

VNLD5090-E 数据手册

 浏览型号VNLD5090-E的Datasheet PDF文件第2页浏览型号VNLD5090-E的Datasheet PDF文件第3页浏览型号VNLD5090-E的Datasheet PDF文件第4页浏览型号VNLD5090-E的Datasheet PDF文件第5页浏览型号VNLD5090-E的Datasheet PDF文件第6页浏览型号VNLD5090-E的Datasheet PDF文件第7页 
VNLD5090-E  
OMNIFET III fully protected low-side driver for automotive  
applications  
Datasheet - production data  
Description  
The VNLD5090-E is a monolithic device made  
using STMicroelectronics VIPower technology,  
intended for driving resistive or inductive loads  
with one side connected to the battery. Built-in  
thermal shutdown protects the chip from  
SO-8  
overtemperature and short-circuit. Output current  
limitation protects the device in an overload  
condition. In case of long duration overload, the  
device limits the dissipated power to a safe level  
up to thermal shutdown intervention.Thermal  
Features  
shutdown, with automatic restart, allows the  
device to recover normal operation as soon as a  
fault condition disappears. Fast demagnetization  
of inductive loads is achieved at turn-off.  
Type  
Vclamp  
RDS(on)  
ID  
VNLD5090-E  
41 V  
90 m  
25 A  
AEC-Q100 qualified  
Drain current: 13 A  
ESD protection  
Overvoltage clamp  
Thermal shutdown  
Current and power limitation  
Very low standby current  
Very low electromagnetic susceptibility  
In compliance with the 2002/95/EC European  
directive  
Table 1. Device summary  
Order codes  
Package  
Tube  
Tape and reel  
SO-8  
VNLD5090-E  
VNLD5090TR-E  
September 2021  
DS9044 Rev 6  
1/20  
This is information on a product in full production.  
www.st.com  
 
 

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