Datasheet > VNHD7008AY

VNHD7008AY

更新时间： 2024-10-30 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		电机驱动驱动器
页数	文件大小	规格书
45页	1275K
描述
用于汽车直流电机驱动的H桥电机驱动器

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中文翻译

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VNHD7008AY 数据手册

VNHD7008AY

H-bridge motor driver for automotive DC motor driving

Datasheet - production data

 MultiSense diagnostic functions

– Output short to ground detection

– Thermal shutdown indication

PowerSSO-36

GAPGCFT00004

– OFF-state open-load detection

– Output short to V detection

Features

 Standby mode

 Half bridge operation

 Charge pump output for reverse battery

Type

R_DS(on)

I_out

V_CCmax

protection

8 mtyp

per channel)

VNHD7008AY

51 A

38 V

 Package: ECOPACK

Description

 AEC-Q100 qualified

 Output current: 51 A

The device is a DC motor driver for automotive

applications. It integrates a full protected dual

high-side driver and the drivers and protections

for the two external power MOSFETs in low-side

configuration.

 Dual fully protected HSD with MultiSense

feedback

 Two integrated drivers for the external LSDs

 3 V CMOS compatible inputs

The device is designed using STMicroelectronics

well known and proven proprietary VIPower M0

 Protections:

– Undervoltage shutdown

– Overvoltage clamp

– Thermal shutdown

– Load current limitation

technology that allows to efficiently integrate on

the same die a true PowerMOSFET with an

intelligent signal/ protection circuitry. The device

is housed in a PowerSSO-36 exposed pad

package to optimize the dissipation

performances.

– Self-limiting of fast thermal transients

(Power Limitation)

The input signals IN and IN can directly

– Cross current protection

– Shoot through protection

interface the microcontroller to select the motor

direction and the brake conditions. Two selection

pins (SEL0 and SEL1) are available to address to

the microcontroller the information available on

the MultiSense. The MultiSense pin allows to

monitor the motor current, provides a voltage

proportional to the battery value and the

information on the temperature of the chip. The

integrated protections are: load current limitation,

overload active power limitation (with latch-off),

overtemperature shutdown (with latch-off) and

cross current protection.

– Loss of ground and loss of V

– Electrostatic discharge protection

– Drain and source voltage monitoring of the

external power MOSFETs, configurable via

an external resistance (short-to-battery

protection)

 PWM operation up to 20 kHz for external LSDs

 MultiSense monitoring functions

– Analog motor current feedback

– Chip temperature monitoring

– Battery voltage monitoring

May 2022

DS11459 Rev 8

1/45

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...45

中文翻译

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