是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-251 | 包装说明: | ROHS COMPLIANT, TO-251, IPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.81 | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 长度: | 6.5 mm |
湿度敏感等级: | 1 | 功能数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 标称输出峰值电流: | 7 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 6.2 mm | 表面贴装: | NO |
技术: | MOS | 温度等级: | AUTOMOTIVE |
端子面层: | Matte Tin (Sn) - annealed | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 7 µs | 接通时间: | 0.5 µs |
宽度: | 2.3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
VND7N04-E | STMICROELECTRONICS | 暂无描述 |
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VND7N04TR-E | STMICROELECTRONICS | 暂无描述 |
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VND7NV04 | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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VND7NV04-1 | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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VND7NV0413TR | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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VND7NV04-1-E | STMICROELECTRONICS | OMNIFET II fully autoprotected Power MOSFET |
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