5秒后页面跳转
VND7N04-1 PDF预览

VND7N04-1

更新时间: 2024-10-27 22:29:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
14页 148K
描述
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

VND7N04-1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:ROHS COMPLIANT, TO-251, IPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.83
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
输入特性:SCHMITT TRIGGER接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
长度:6.5 mm湿度敏感等级:1
功能数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:OPEN-DRAIN输出电流流向:SINK
标称输出峰值电流:7 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:SIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:6.2 mm最大压摆率:0.5 mA
表面贴装:NO技术:MOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子节距:2.25 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:30
断开时间:7 µs接通时间:0.5 µs
宽度:2.3 mmBase Number Matches:1

VND7N04-1 数据手册

 浏览型号VND7N04-1的Datasheet PDF文件第2页浏览型号VND7N04-1的Datasheet PDF文件第3页浏览型号VND7N04-1的Datasheet PDF文件第4页浏览型号VND7N04-1的Datasheet PDF文件第5页浏览型号VND7N04-1的Datasheet PDF文件第6页浏览型号VND7N04-1的Datasheet PDF文件第7页 
VND7N04/VND7N04-1  
VNP7N04FI/K7N04FM  
”OMNIFET”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
Vclamp  
RDS(on)  
Ilim  
VND7N04  
42 V  
42 V  
42 V  
42 V  
0.14 Ω  
0.14 Ω  
0.14 Ω  
0.14 Ω  
7 A  
7 A  
7 A  
7 A  
VND7N04-1  
VNP7N04FI  
VNK7N04FM  
3
3
1
2
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
1
DPAK  
TO-252  
IPAK  
TO-251  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
3
2
1
ISOWATT220  
SOT82-FM  
DESCRIPTION  
The VND7N04, VND7N04-1, VNP7N04FI and  
VNK7N04FM are monolithic devices made using  
STMicroeletronics VIPower M0 Technology,  
intended for replacement of standard power  
MOSFETS in DC to 50 KHz applications. Built-in  
thermal shut-down, linear current limitation and  
overvoltage clamp protect the chip in harsh  
BLOCK DIAGRAM  
enviroments.  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
1/14  
February 2000  

VND7N04-1 替代型号

型号 品牌 替代类型 描述 数据表
VND7N04-1-E STMICROELECTRONICS

类似代替

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

与VND7N04-1相关器件

型号 品牌 获取价格 描述 数据表
VND7N04-1-E STMICROELECTRONICS

获取价格

OMNIFET :FULLY AUTOPROTECTED POWER MOSFET
VND7N04-E STMICROELECTRONICS

获取价格

暂无描述
VND7N04TR-E STMICROELECTRONICS

获取价格

暂无描述
VND7NV04 STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND7NV04-1 STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND7NV0413TR STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND7NV04-1-E STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND7NV04-E STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND7NV04TR-E STMICROELECTRONICS

获取价格

OMNIFET II fully autoprotected Power MOSFET
VND810 STMICROELECTRONICS

获取价格

DOUBLE CHANNEL HIGH SIDE DRIVER