是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | ROHS COMPLIANT, TO-251, IPAK-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.83 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
输入特性: | SCHMITT TRIGGER | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
长度: | 6.5 mm | 湿度敏感等级: | 1 |
功能数量: | 1 | 端子数量: | 3 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
输出特性: | OPEN-DRAIN | 输出电流流向: | SINK |
标称输出峰值电流: | 7 A | 输出极性: | TRUE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 认证状态: | Not Qualified |
座面最大高度: | 6.2 mm | 最大压摆率: | 0.5 mA |
表面贴装: | NO | 技术: | MOS |
温度等级: | AUTOMOTIVE | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.25 mm |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
断开时间: | 7 µs | 接通时间: | 0.5 µs |
宽度: | 2.3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VND7N04-1-E | STMICROELECTRONICS |
类似代替 |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VND7N04-1-E | STMICROELECTRONICS |
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OMNIFET :FULLY AUTOPROTECTED POWER MOSFET | |
VND7N04-E | STMICROELECTRONICS |
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暂无描述 | |
VND7N04TR-E | STMICROELECTRONICS |
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暂无描述 | |
VND7NV04 | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VND7NV04-1 | STMICROELECTRONICS |
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VND7NV0413TR | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VND7NV04-1-E | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VND7NV04-E | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VND7NV04TR-E | STMICROELECTRONICS |
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OMNIFET II fully autoprotected Power MOSFET | |
VND810 | STMICROELECTRONICS |
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DOUBLE CHANNEL HIGH SIDE DRIVER |