Datasheet > 驱动程序和接口 > 外围驱动器> VND600PEPTR-E

VND600PEPTR-E

更新时间： 2024-10-28 03:19:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		外围驱动器驱动程序和接口接口集成电路光电二极管
页数	文件大小	规格书
19页	233K
描述
DOUBLE CHANNEL HIGH SIDE DRIVER

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

VND600PEPTR-E 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	SSOP
包装说明：	ROHS COMPLIANT, SSOP-24	针数：	24
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.8
Is Samacsys：	N	内置保护：	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数：	2	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G24	长度：	10.3 mm
功能数量：	1	端子数量：	24
输出电流流向：	SOURCE	封装主体材料：	PLASTIC/EPOXY
封装代码：	HSSOP	封装等效代码：	SOP24,.4,32
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	8/36 V
认证状态：	Not Qualified	座面最大高度：	2.47 mm
子类别：	Peripheral Drivers	最大供电电压：	36 V
最小供电电压：	5.5 V	标称供电电压：	13 V
表面贴装：	YES	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.5 mm
Base Number Matches：	1

VND600PEPTR-E 数据手册

VND600PEP-E

DOUBLE CHANNEL HIGH SIDE DRIVER

Figure 1. Package

Table 1. General Features

TYPE

DS(on)

(*)

lim

VND600PEP-E

30mΩ

25A

36V

(*) Per each channel

■ DC SHORT CIRCUIT CURRENT: 25A

■ CMOS COMPATIBLE INPUTS

■ PROPORTIONAL LOAD CURRENT SENSE

■ UNDERVOLTAGE AND OVERVOLTAGE

SHUT-DOWN

■ OVERVOLTAGE CLAMP

■ THERMAL SHUT-DOWN

■ CURRENT LIMITATION

PowerSSO-24

■ VERY LOW STAND-BY POWER DISSIPATION

■ PROTECTION AGAINST:

LOSS OF GROUND AND LOSS OF V

■ REVERSE BATTERY PROTECTION (**)

■ IN COMPLIANCE WITH THE 2002/95/EC

EUROPEAN DIRECTIVE

This device has two channels in high side

configuration; each channel has an analog sense

output on which the sensing current is proportional

(according to a known ratio) to the corresponding

load current. Built-in thermal shut-down and

outputs current limitation protect the chip from

over temperature and short circuit. Device turns off

in case of ground pin disconnection.

DESCRIPTION

The VND600PEP-E is a monolithic device made

using

STMicroelectronics

VIPower

M0-3

technology. It is intended for driving resistive or

inductive loads with one side connected to ground.

Active V

pin voltage clamp protects the device

against low energy spikes (see ISO7637 transient

compatibility table).

Table 2. Order Codes

Package

Tube

VND600PEP-E

Tape and Reel

PowerSSO-24

VND600PEPTR-E

Note: (**) See application schematic at page 9

Rev. 5

May 2005

1/19

This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.

12 3 4 5 6 7...19

中文翻译

下载PDF

与VND600PEPTR-E相关器件

型号	品牌	获取价格	描述	数据表
VND600PTR-E	STMICROELECTRONICS	获取价格	Double channel high-side solid state relay
VND600SP	STMICROELECTRONICS	获取价格	DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND600SP13TR	STMICROELECTRONICS	获取价格	DOUBLE CHANNEL HIGH SIDE SOLID STATE RELAY
VND600SP-E	STMICROELECTRONICS	获取价格	Double channel high-side driver
VND600SPTR-E	STMICROELECTRONICS	获取价格	Double channel high-side driver
VND600TR-E	STMICROELECTRONICS	获取价格	DOUBLE CHANNEL HIGH SIDE DRIVER
VND610SP	ETC	获取价格
VND670SP	STMICROELECTRONICS	获取价格	Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
VND670SP_08	STMICROELECTRONICS	获取价格	Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
VND670SP13TR	STMICROELECTRONICS	获取价格	Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

与VND600PEPTR-E相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

VND600PEPTR-E

VND600PEPTR-E 技术参数

VND600PEPTR-E 数据手册

与VND600PEPTR-E相关器件

与VND600PEPTR-E相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

VND600PEPTR-E

VND600PEPTR-E 技术参数

VND600PEPTR-E 数据手册

与VND600PEPTR-E相关器件

与VND600PEPTR-E相关文章

您还可以找

您在本页遇到什么问题？