5秒后页面跳转
VND5N07TR-E PDF预览

VND5N07TR-E

更新时间: 2024-10-28 12:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
24页 504K
描述
OMNIFET II fully autoprotected Power MOSFET

VND5N07TR-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:TO-252,
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:20 weeks风险等级:1.6
Is Samacsys:N内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G2
JESD-609代码:e3长度:6.5 mm
湿度敏感等级:3功能数量:1
端子数量:2输出电流流向:SINK
标称输出峰值电流:5 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-252封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:2.63 mm标称供电电压:5 V
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:2.28 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:5 µs接通时间:0.25 µs
宽度:6.1 mmBase Number Matches:1

VND5N07TR-E 数据手册

 浏览型号VND5N07TR-E的Datasheet PDF文件第2页浏览型号VND5N07TR-E的Datasheet PDF文件第3页浏览型号VND5N07TR-E的Datasheet PDF文件第4页浏览型号VND5N07TR-E的Datasheet PDF文件第5页浏览型号VND5N07TR-E的Datasheet PDF文件第6页浏览型号VND5N07TR-E的Datasheet PDF文件第7页 
VND5N07  
OMNIFET II  
fully autoprotected Power MOSFET  
Features  
Max. on-state resistance (per ch.) RDS (on) 0.2  
3
3
2
1
Current limitation (typ)  
ILIMH  
5 A  
1
DPAK  
TO-252  
IPAK  
TO-251  
Drain-Source clamp voltage  
VCLAMP  
70V  
Linear current limitation  
Thermal shutdown  
Short circuit protection  
Integrated clamp  
ISOWATT200  
Low current drawn from input pin  
Diagnostic feedback through input pin  
Esd protection  
SOT-82FM  
Direct access to the gate of the power mosfet  
Description  
(analog driving)  
The VND5N07 is a monolithic device designed in  
STMicroelectronics VIPower M0 technology,  
intended for replacement of standard Power  
MOSFETs from DC to 50KHz applications. Built in  
thermal shutdown, linear current limitation and  
overvoltage clamp protect the chip in harsh  
environments.  
Compatible with standard Power MOSFET  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
Table 1.  
Device summary  
Package  
Order codes  
Tube  
Tape and reel  
DPAK  
IPAK  
VND5N07  
VND5N07-1  
VNP5N07FI  
VNK5N07FM  
VND5N0713TR  
ISOWATT220  
SOT-82FM  
December 2008  
Rev 3  
1/24  
www.st.com  
24  
 

VND5N07TR-E 替代型号

型号 品牌 替代类型 描述 数据表
VND5N0713TR STMICROELECTRONICS

类似代替

?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET

与VND5N07TR-E相关器件

型号 品牌 获取价格 描述 数据表
VND5T016ASP-E STMICROELECTRONICS

获取价格

for car body applications
VND5T016ASPTR-E STMICROELECTRONICS

获取价格

支持模拟电流感应的双通道高侧驱动器,用于24V汽车应用
VND5T035AK-E STMICROELECTRONICS

获取价格

for car body applications
VND5T035AKTR-E STMICROELECTRONICS

获取价格

Double channel high-side driver with analog current sense for 24 V automotive applications
VND5T035LAK-E STMICROELECTRONICS

获取价格

for car body applications
VND5T035LAKTR-E STMICROELECTRONICS

获取价格

支持模拟电流感应的双通道高侧驱动器,用于24V汽车应用
VND5T050AK-E STMICROELECTRONICS

获取价格

for car body applications
VND5T050AKTR-E STMICROELECTRONICS

获取价格

Double channel high-side driver with analog current sense for 24 V automotive applications
VND5T100A-E STMICROELECTRONICS

获取价格

for car body applications
VND5T100AJ-E STMICROELECTRONICS

获取价格

Double channel high-side driver with analog current sense for 24 V automotive applications