5秒后页面跳转
捷配首页

Datasheet > VND5E160MJ-E
VND5E160MJ-E PDF预览

VND5E160MJ-E

更新时间： 2024-10-29 14:58:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动驱动器
页数 文件大小 规格书
34页 646K
描述
支持模拟电流感应的双通道高侧驱动器，用于汽车应用

阅读下载

中文翻译

获取价格

VND5E160MJ-E 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
零件包装代码：SOIC包装说明：ROHS COMPLIANT, SSO-12
针数：12Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.68内置保护：TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE
驱动器位数：2接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：R-PDSO-G12JESD-609代码：e3
长度：4.9 mm湿度敏感等级：3
功能数量：1端子数量：12
输出电流流向：SOURCE封装主体材料：PLASTIC/EPOXY
封装代码：HLSSOP封装等效代码：SOP12,.25,32
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, LOW PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：260电源：8/28 V
认证状态：Not Qualified座面最大高度：1.62 mm
子类别：Peripheral Drivers最大供电电压：28 V
最小供电电压：4.5 V标称供电电压：13 V
表面贴装：YES技术：CMOS
端子面层：Matte Tin (Sn) - annealed端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED断开时间：15 µs
接通时间：10 µs宽度：3.9 mm
Base Number Matches：1

VND5E160MJ-E 数据手册

 浏览型号VND5E160MJ-E的Datasheet PDF文件第2页浏览型号VND5E160MJ-E的Datasheet PDF文件第3页浏览型号VND5E160MJ-E的Datasheet PDF文件第4页浏览型号VND5E160MJ-E的Datasheet PDF文件第5页浏览型号VND5E160MJ-E的Datasheet PDF文件第6页浏览型号VND5E160MJ-E的Datasheet PDF文件第7页 
VND5E160MJ-E  
Double-channel high-side driver with analog current sense  
for automotive applications  
Features  
Max transient supply voltage  
Operating voltage range  
VCC  
41 V  
VCC 4.5 V to 28 V  
PowerSSO-12  
Max on-state resistance (per ch.) RON  
160 m  
10 A  
– Electrostatic discharge protection  
Current limitation (typ.)  
Off-state supply current  
ILIMH  
IS  
2 µA(1)  
Application  
1. Typical value with all loads connected.  
•
All types of resistive, inductive and capacitive  
loads  
•
General  
•
Suitable as LED driver  
– Inrush current active management by  
power limitation  
Description  
– Very low standby current  
– 3 V CMOS compatible inputs  
The VND5E160MJ-E is a double-channel  
high-side driver manufactured in the ST  
– Optimized electromagnetic emissions  
– Very low electromagnetic susceptibility  
proprietary VIPower™ M0-5 technology and  
housed in the tiny PowerSSO-12 package. The  
VND5E160MJ-E is designed to drive 12 V  
automotive grounded loads delivering protection,  
diagnostics and easy 3 V and 5 V CMOS  
compatible interface with any microcontroller.  
– In compliance with the 2002/95/EC  
european directive  
– Very low current sense leakage  
•
Diagnostic functions  
– Proportional load current sense  
The device integrates advanced protective  
functions such as load current limitation, inrush  
and overload active management by power  
limitation, overtemperature shut-off with  
auto-restart and overvoltage active clamp. A  
dedicated analog current sense pin is associated  
with every output channel in order to provide  
enhanced diagnostic functions including fast  
detection of overload and short-circuit to ground  
through power limitation indication and  
– High-precision current sense for wide  
currents range  
– Current sense disable  
– Overload and short to ground (power  
limitation) indication  
– Thermal shutdown indication  
•
Protections  
– Undervoltage shutdown  
– Overvoltage clamp  
overtemperature indication.  
– Load current limitation  
The current sensing and diagnostic feedback of  
the whole device can be disabled by pulling the  
CS_DIS pin high to allow sharing of the external  
sense resistor with other similar devices.  
– Self limiting of fast thermal transients  
– Protection against loss of ground and loss  
of V  
CC  
– Overtemperature shutdown with auto  
restart (thermal shutdown)  
– Reverse battery protected (see Figure 29)  
September 2013  
Doc ID 15616 Rev 2  
1/34  
www.st.com  
1
1234567...34

中文翻译

下载PDF

与VND5E160MJ-E相关器件

型号 品牌 获取价格 描述 数据表
VND5E160MJTR-E STMICROELECTRONICS

获取价格

 		Double-channel high-side driver with analog current sense for automotive applications
VND5N07 STMICROELECTRONICS

获取价格

 		?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07_08 STMICROELECTRONICS

获取价格

 		OMNIFET IIfully autoprotected Power MOSFET
VND5N07-1 STMICROELECTRONICS

获取价格

 		?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N0713TR STMICROELECTRONICS

获取价格

 		?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07-E STMICROELECTRONICS

获取价格

 		OMNIFET：全自动保护功率MOSFET
VND5N07FI STMICROELECTRONICS

获取价格

 		?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07FM STMICROELECTRONICS

获取价格

 		?OMNIFET?: FULLY AUTOPROTECTED POWER MOSFET
VND5N07TR-E STMICROELECTRONICS

获取价格

 		OMNIFET II fully autoprotected Power MOSFET
VND5T016ASP-E STMICROELECTRONICS

获取价格

 		for car body applications

与VND5E160MJ-E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证