是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | ZFM | 包装说明: | ZIP, ZIP7H,.2,.7TB |
针数: | 7 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.89 | Is Samacsys: | N |
内置保护: | TRANSIENT; THERMAL; UNDER VOLTAGE | 驱动器位数: | 2 |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PZFM-T7 |
JESD-609代码: | e0 | 功能数量: | 1 |
端子数量: | 7 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 输出电流流向: | SOURCE |
最大输出电流: | 5.2 A | 标称输出峰值电流: | 3.4 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | ZIP |
封装等效代码: | ZIP7H,.2,.7TB | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 8/16 V | 认证状态: | Not Qualified |
子类别: | Peripheral Drivers | 最大供电电压: | 26 V |
最小供电电压: | 6 V | 标称供电电压: | 13 V |
表面贴装: | NO | 温度等级: | AUTOMOTIVE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 1.27 mm | 端子位置: | ZIG-ZAG |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 500 µs |
接通时间: | 200 µs | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VND10B(012Y) | STMICROELECTRONICS |
获取价格 |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10B_04 | STMICROELECTRONICS |
获取价格 |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10B011Y | STMICROELECTRONICS |
获取价格 |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10B012Y | STMICROELECTRONICS |
获取价格 |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10BSP | STMICROELECTRONICS |
获取价格 |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10BSP13TR | ETC |
获取价格 |
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10BSPTR-E | STMICROELECTRONICS |
获取价格 |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10N06 | STMICROELECTRONICS |
获取价格 |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10N06-1 | STMICROELECTRONICS |
获取价格 |
ISO HIGH SIDE SMART POWER SOLID STATE RELAY | |
VND10N0613TR | STMICROELECTRONICS |
获取价格 |
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET |