VND05BSP-E

更新时间： 2024-01-10 05:05:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		继电器固态继电器
页数	文件大小	规格书
9页	229K
描述
IC,NORMALLY-OPEN PC-MOUNT SOLID-STATE RELAY,2-CHANNEL,SO

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中文翻译

获取价格

技术参数
数据手册
替代型号

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VND05BSP-E 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.83	JESD-609代码：	e3
湿度敏感等级：	3	峰值回流温度（摄氏度）：	250
端子面层：	Matte Tin (Sn) - annealed	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

VND05BSP-E 数据手册

VND05BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE

V_DSS

R_DS(on

0.2

)

I_OUT

V_CC

VND05BSP

40 V

1.6 A

26 V

Ω

■

OUTPUT CURRENT (CONTINUOUS):

9A @ T_c= 85^oC PER CHANNEL

5V LOGIC LEVEL COMPATIBLE INPUT

THERMAL SHUT-DOWN

UNDER VOLTAGE PROTECTION

OPEN DRAIN DIAGNOSTIC OUTPUT

INDUCTIVE LOAD FAST

■

DEMAGNETIZATION

■

VERY LOW STAND-BY POWER

DISSIPATION

DESCRIPTION

PowerSO-10

The VND05BSP is a monolithic device made

using STMicroelectronics VIPower Technology,

intended for driving resistive or inductive loads

with one side grounded. This device has two

channels, and a common diagnostic. Built-in

thermal shut-down protects the chip from over

temperature and short circuit.

The status output provides an indication of open

load in on

state, open load in off state,

overtemperature conditions and stuck-on to V_CC

BLOCK DIAGRAM

1/9

April 2001

12 3 4 5 6 7...9

中文翻译

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VND05BSP-E 替代型号

型号	品牌	替代类型	描述	数据表
VND05BSP13TR	STMICROELECTRONICS	功能相似	BUF OR INV BASED PRPHL DRVR, PDSO10, ROHS COMPLIANT, SO-10
VND05BSP	STMICROELECTRONICS	类似代替	ISO HIGH SIDE SMART POWER SOLID STATE RELAY

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VND10BSP	STMICROELECTRONICS	获取价格	ISO HIGH SIDE SMART POWER SOLID STATE RELAY
VND10BSP13TR	ETC	获取价格	DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY