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VND05BSP-E PDF预览

VND05BSP-E

更新时间: 2024-11-26 12:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 继电器固态继电器
页数 文件大小 规格书
9页 229K
描述
IC,NORMALLY-OPEN PC-MOUNT SOLID-STATE RELAY,2-CHANNEL,SO

VND05BSP-E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.83JESD-609代码:e3
湿度敏感等级:3峰值回流温度(摄氏度):250
端子面层:Matte Tin (Sn) - annealed处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VND05BSP-E 数据手册

 浏览型号VND05BSP-E的Datasheet PDF文件第2页浏览型号VND05BSP-E的Datasheet PDF文件第3页浏览型号VND05BSP-E的Datasheet PDF文件第4页浏览型号VND05BSP-E的Datasheet PDF文件第5页浏览型号VND05BSP-E的Datasheet PDF文件第6页浏览型号VND05BSP-E的Datasheet PDF文件第7页 
VND05BSP  
®
ISO HIGH SIDE SMART POWER SOLID STATE RELAY  
TYPE  
VDSS  
RDS(on  
0.2  
)
IOUT  
VCC  
VND05BSP  
40 V  
1.6 A  
26 V  
OUTPUT CURRENT (CONTINUOUS):  
9A @ Tc = 85oC PER CHANNEL  
5V LOGIC LEVEL COMPATIBLE INPUT  
THERMAL SHUT-DOWN  
UNDER VOLTAGE PROTECTION  
OPEN DRAIN DIAGNOSTIC OUTPUT  
INDUCTIVE LOAD FAST  
DEMAGNETIZATION  
10  
VERY LOW STAND-BY POWER  
DISSIPATION  
1
DESCRIPTION  
PowerSO-10  
The VND05BSP is a monolithic device made  
using STMicroelectronics VIPower Technology,  
intended for driving resistive or inductive loads  
with one side grounded. This device has two  
channels, and a common diagnostic. Built-in  
thermal shut-down protects the chip from over  
temperature and short circuit.  
The status output provides an indication of open  
load in on  
state, open load in off state,  
overtemperature conditions and stuck-on to VCC  
.
BLOCK DIAGRAM  
1/9  
April 2001  

VND05BSP-E 替代型号

型号 品牌 替代类型 描述 数据表
VND05BSP STMICROELECTRONICS

类似代替

ISO HIGH SIDE SMART POWER SOLID STATE RELAY
VND05BSP13TR STMICROELECTRONICS

功能相似

BUF OR INV BASED PRPHL DRVR, PDSO10, ROHS COMPLIANT, SO-10

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