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VNB14N04-E PDF预览

VNB14N04-E

更新时间: 2024-11-06 12:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路
页数 文件大小 规格书
17页 522K
描述
"OMNIFET" fully autoprotected Power MOSFET

VNB14N04-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.8
Is Samacsys:N接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-609代码:e3湿度敏感等级:1
端子面层:Matte Tin (Sn) - annealedBase Number Matches:1

VNB14N04-E 数据手册

 浏览型号VNB14N04-E的Datasheet PDF文件第2页浏览型号VNB14N04-E的Datasheet PDF文件第3页浏览型号VNB14N04-E的Datasheet PDF文件第4页浏览型号VNB14N04-E的Datasheet PDF文件第5页浏览型号VNB14N04-E的Datasheet PDF文件第6页浏览型号VNB14N04-E的Datasheet PDF文件第7页 
VNB14N04 - VNK14N04FM  
VNV14N04  
"OMNIFET"  
fully autoprotected Power MOSFET  
Features  
Type  
Vclamp  
RDS(on)  
Ilim  
VNB14N04  
VNK14N04FM  
VNV14N04  
42 V  
42 V  
42 V  
0.07  
0.07 Ω  
0.07 Ω  
14 A  
14 A  
14 A  
Linear current limitation  
Thermal shutdown  
Short circuit protection  
Integrated clamp  
Low current drawn from input pin  
Diagnostic feedback through input pin  
ESD protection  
Direct access to the gate of the power  
MOSFET (analog driving)  
Description  
Compatible with standard power MOSFET  
The VNB14N04, VNK14N04FM and VNV14N04  
are monolithic devices made using  
STMicroeletronics VIPower M0 Technology,  
intended for replacement of standard power  
MOSFETS in DC to 50 kHz applications. Built-in  
thermal shutdown, linear current limitation and  
overvoltage clamp protect the chip in harsh  
environment.  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
Table 1.  
Device summary  
Order code  
Part number  
VNB14N04, VNB14N04-E,  
VNB14N0413TR, VNB14N04TR-E  
VNB14N04  
VNK14N04FM VNK14N04FM  
VNV14N04 VNV14N04, VNV14N04-E  
April 2009  
Rev 6  
1/17  
www.st.com  
17  
 

VNB14N04-E 替代型号

型号 品牌 替代类型 描述 数据表
VNB14N04TR-E STMICROELECTRONICS

完全替代

暂无描述
VNB14N04 STMICROELECTRONICS

类似代替

”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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