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VN50300T PDF预览

VN50300T

更新时间: 2024-11-05 22:15:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 42K
描述
N-Channel 500-V (D-S) MOSFETs

VN50300T 数据手册

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VN50300L/VN50300T  
Vishay Siliconix  
N-Channel 500-V (D-S) MOSFETs  
PRODUCT SUMMARY  
Part Number V(BR)DSS Min (V) rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
VN50300L  
VN50300T  
300 @ V = 10 V  
1 to 4.5  
1 to 4.5  
0.033  
0.022  
GS  
500  
300 @ V = 10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D Moderate On-Resistance: 240 W  
D Low Offset Voltage  
D High-Voltage Drivers: Relays, Solenoids,  
Lamps, Hammers, Displays, Transistors,etc.  
D Secondary Breakdown Free: 520 V D Full-Voltage Operation  
D Telephone Mute Switches, Ringer Circuits  
D Power Supply, Converters  
D Motor Control  
D Low Power/Voltage Driven  
D Low Input and Output Leakage  
D Excellent Thermal Stability  
D Easily Driven Without Buffer  
D Low Error Voltage  
D No High-Temperature  
“Run-Away”  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
Device Marking  
Top View  
Device Marking  
Front View  
1
2
3
S
G
D
G
S
1
2
V1wll  
“S” VN5  
0300L  
xxyy  
3
D
V1 = Part Number Code for VN50300T  
w = Week Code  
ll = Lot Traceability  
“S” = Siliconix Logo  
xxyy = Date Code  
Top View  
Top View  
VN50300T  
VN50300L  
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)  
Parameter  
Symbol  
VN50300L  
VN50300T  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
500  
"30  
0.033  
0.021  
0.013  
0.8  
500  
"30  
0.022  
0.013  
0.08  
0.35  
0.14  
350  
DS  
GS  
V
T = 25_C  
A
A
Continuous Drain Current (T = 150__C)  
I
J
D
T = 100_C  
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
A
Thermal Resistance, Junction-to-Ambient  
R
thJA  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
–55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70216  
S-04279—Rev. D, 16-Jul-01  
www.vishay.com  
11-1  

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