Datasheet > VN3515L-G

VN3515L-G

更新时间： 2024-11-10 21:15:07

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	341K
描述
Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3

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技术参数
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VN3515L-G 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	TO-92
包装说明：	CYLINDRICAL, O-PBCY-T3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.16	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	350 V	最大漏极电流 (ID)：	0.15 A
最大漏源导通电阻：	15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	10 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	Matte Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VN3515L-G 数据手册

VN3515

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Converters

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Ordering Information

R_DS(ON)

I_D(ON)

V_GS(TH)

(max)

(V)

Package Option

BV_DSS/BV_DGS

Device

(max)

(Ω)

(min)

(mA)

(V)

TO-92

VN3515

VN3515L-G

350

1.8

150

-G indicates package is RoHS compliant (‘Green’)

Pin Conﬁguration

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

BV_DSS

GATE

TO-92 (L)

Drain-to-source voltage

Drain-to-gate voltage

BV_DGS

Product Marking

Gate-to-source voltage

±20V

-55^OC to +150^OC

300^OC

SiVN

Operating and storage temperature

Soldering temperature*

YY = Year Sealed

3 5 1 5 L

Y Y WW

WW = Week Sealed

= “Green” Packaging

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Package may or may not include the following marks: Si or

TO-92 (L)

Distance of 1.6mm from case for 10 seconds.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3

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与VN3515L-G相关器件

型号	品牌	获取价格	描述	数据表
VN3515LP001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP014	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP017	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LTR	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met

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