VN3515

更新时间： 2024-11-10 03:19:39

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	441K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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VN3515 数据手册

VN3515L

VN4012L

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

TO-92

BV_DSS

R_DS(ON)

V_GS(th)

I_D(ON)

(min)

BV_DGS

350V

400V

(max)

15Ω

12Ω

1.8V

0.15A

VN3515L

VN4012L

Features

Advanced DMOS Technology

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex's well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Complementary N- and P-channel devices

Applications

Package Option

❏

Motor controls

Converters

Amplifiers

Telecom Switching

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

S G D

BV_DSS

BV_DGS

± 20V

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VN3515相关器件

型号	品牌	获取价格	描述	数据表
VN3515L	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN3515L18	VISHAY	获取价格	150mA, 350V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
VN3515L-18	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L18-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-1TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-1TR1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-2TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-2TR1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515LP001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met

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