5秒后页面跳转
VN340SPTR-33-E PDF预览

VN340SPTR-33-E

更新时间: 2024-11-10 03:19:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 继电器固态继电器
页数 文件大小 规格书
16页 237K
描述
Quad high side smart power solid state relay

VN340SPTR-33-E 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOIC包装说明:HSOP, SOP10,.55FL
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:12 weeks风险等级:0.81
内置保护:TRANSIENT; THERMAL; UNDER VOLTAGE驱动器位数:4
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G10
JESD-609代码:e3长度:9.4 mm
湿度敏感等级:3功能数量:4
端子数量:10输出电流流向:SINK
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装代码:HSOP封装等效代码:SOP10,.55FL
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG
峰值回流温度(摄氏度):250电源:24 V
认证状态:Not Qualified座面最大高度:3.66 mm
子类别:Peripheral Drivers最大供电电压:36 V
最小供电电压:10 V标称供电电压:24 V
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:50 µs接通时间:100 µs
宽度:7.5 mmBase Number Matches:1

VN340SPTR-33-E 数据手册

 浏览型号VN340SPTR-33-E的Datasheet PDF文件第2页浏览型号VN340SPTR-33-E的Datasheet PDF文件第3页浏览型号VN340SPTR-33-E的Datasheet PDF文件第4页浏览型号VN340SPTR-33-E的Datasheet PDF文件第5页浏览型号VN340SPTR-33-E的Datasheet PDF文件第6页浏览型号VN340SPTR-33-E的Datasheet PDF文件第7页 
VN340SP-33-E  
Quad high side smart power solid state relay  
Features  
TM  
PowerSO-10  
(1)  
(1)  
(1)  
Type  
Vdemag  
RDS(on)  
Iout  
VCC  
VN340SP-33-E VCC-55 V  
1. Per channel.  
0.2 Ω  
1 A 36 V  
Description  
Output current: 1 A per channel  
Digital I/O‘s clamped at 32 V minimum voltage  
Shorted load and overtemperature protections  
Protection against loss of ground  
Built-in current limiter  
The VN340SP-33-E is a monolithic device made  
using STMicroelectronics VIPower technology,  
intended for driving four independent resistive or  
inductive loads with one side connected to  
ground. Active current limitation avoids dropping  
the system power supply in case of shorted load.  
Built-in thermal shut-down protects the chip from  
overtemperature and short circuit. The open drain  
diagnostic output indicates overtemperature  
conditions. Each I/O is pulled down when  
overtemperature condition of the relative channel  
is verified.  
Undervoltage shut-down  
Open drain diagnostic output  
Fast demagnetization of inductive loads  
Conforms to IEC 61131-2  
Figure 1.  
Block diagram  
August 2008  
Rev 3  
1/16  
www.st.com  
16  

VN340SPTR-33-E 替代型号

型号 品牌 替代类型 描述 数据表
VN330SPTR-32-E STMICROELECTRONICS

完全替代

QUAD HIGH SIDE SMART POWER SOLID STATE RELAY
VN330SP-32-E STMICROELECTRONICS

类似代替

Quad high side smart Power solid state relay
VN340SP-33-E STMICROELECTRONICS

功能相似

Quad high side smart Power solid state relay

与VN340SPTR-33-E相关器件

型号 品牌 获取价格 描述 数据表
VN340SPTR-E STMICROELECTRONICS

获取价格

Quad high side smart Power solid state relay
VN3515 SUPERTEX

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
VN3515L SUPERTEX

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
VN3515L18 VISHAY

获取价格

150mA, 350V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
VN3515L-18 TEMIC

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L18-2 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-1TA VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-1TR1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-2TA VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN3515L-2TR1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 350V, 1-Element, N-Channel, Silicon, Met