VN2222LL

更新时间： 2025-07-21 22:35:23

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管场效应晶体管开关
页数	文件大小	规格书
4页	72K
描述
TMOS FET Transistor

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中文翻译

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数据手册
替代型号

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VN2222LL 数据手册

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SEMICONDUCTOR TECHNICAL DATA

N–Channel — Enhancement

3 DRAIN

Motorola Preferred Device

GATE

1 SOURCE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

CASE 29–04, STYLE 22

TO–92 (TO–226AA)

Gate–Source Voltage

— Continuous

— Non–repetitive (t ≤ 50 µs)

±20

±40

Vdc

Vpk

GSM

Drain Current

Continuous

Pulsed

mAdc

150

1000

Total Power Dissipation @ T = 25°C

Derate above 25°C

400

3.2

mW/°C

Operating and Storage

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

312.5

300

Unit

°C/W

°C

Thermal Resistance, Junction to Ambient

θJA

Maximum Lead Temperature for

Soldering Purposes, 1/16″ from case

for 10 seconds

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Max

Unit

Drain–Source Breakdown Voltage

—

Vdc

(BR)DSS

= 0, I = 100 µAdc)

Zero Gate Voltage Drain Current

µAdc

DSS

= 48 Vdc, V

= 0)

—

500

= 0, T = 125°C)

Gate–Body Leakage Current, Forward

(V = 30 Vdc, V = 0)

—

–100

nAdc

GSSF

GSF

(1)

ON CHARACTERISTICS

Gate Threshold Voltage

0.6

2.5

Vdc

GS(th)

= V , I = 1.0 mAdc)

Static Drain–Source On–Resistance

Ω

DS(on)

= 10 Vdc, I = 0.5 Adc)

—

7.5

13.5

= 10 Vdc, I = 0.5 Vdc, T = 125°C)

1. Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M_Mot_oo_tor_ro_ol_la_a,S_Inm_c.a₁₉ll₉–₇Signal Transistors, FETs and Diodes Device Data

12 3 4

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VN2222LL 替代型号

型号	品牌	替代类型	描述	数据表
VN2222LL	ONSEMI	功能相似	Small Signal MOSFET 150 mAmps, 60 Volts
VN2222LLRL	ONSEMI	功能相似	Small Signal MOSFET 150 mAmps, 60 Volts

与VN2222LL相关器件

型号	品牌	获取价格	描述	数据表
VN2222LL-18	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
VN2222LL-2TA	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
VN2222LL-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
VN2222LL-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET
VN2222LL-GP013	MICROCHIP	获取价格	SMALL SIGNAL, FET
VN2222LL-GP014	MICROCHIP	获取价格	SMALL SIGNAL, FET
VN2222LL/D	ETC	获取价格	Small Signal MOSFET 150 mAmps， 60 Volts
VN2222LL18-2	VISHAY	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
VN2222LLG	ONSEMI	获取价格	Small Signal MOSFET 150 mAmps, 60 Volts
VN2222LLP006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta

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