Datasheet > VN2210N2

VN2210N2

更新时间： 2024-11-08 22:15:39

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	46K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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VN2210N2 数据手册

VN2210

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

(min)

BV_DGS

(max)

TO-39

TO-92

100V

0.35Ω

VN2210N2

VN2210N3

^†MIL visual screening available

Advanced DMOS Technology

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

These enhancement-mode (normally-off) transistors utilize a

verticalDMOSstructureandSupertex’swell-provensilicon-gate

manufacturingprocess.Thiscombinationproducesdeviceswith

thepowerhandlingcapabilitiesofbipolartransistorsandwiththe

high input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS structures,

these devices are free from thermal runaway and thermally-

induced secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

Supertex’sverticalDMOSFETsareideallysuitedtoawiderange

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ High input impedance and high gain

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

❏ Converters

Package Options

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

± 20V

S G D

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-39

Case: DRAIN

TO-92

Operating and Storage Temperature

Soldering Temperature*

-55°C to +150°C

300°C

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

07/08/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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VN2210N2 替代型号

型号	品牌	替代类型	描述	数据表
BS170	ONSEMI	功能相似	Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

与VN2210N2相关器件

型号	品牌	获取价格	描述	数据表
VN2210N2G	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2210N2-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor
VN2210N3	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FETs
VN2210N3G	MICROCHIP	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN2210N3-G	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
VN2210N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
VN2210N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
VN2210N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
VN2210N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
VN2210N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 1.2A I(D), 100V, 1-Element, N-Channel, Silicon, Meta

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