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VN1306 PDF预览

VN1306

更新时间: 2024-02-02 17:55:02
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 31K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

VN1306 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.75Is Samacsys:N
Base Number Matches:1

VN1306 数据手册

 浏览型号VN1306的Datasheet PDF文件第2页浏览型号VN1306的Datasheet PDF文件第3页浏览型号VN1306的Datasheet PDF文件第4页 
VN1304  
VN1306  
VN1310  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
BVDSS  
/
RDS(ON)  
(max)  
8.0  
ID(ON)  
Order Number / Package  
BVDGS  
40V  
(min)  
0.5A  
0.5A  
0.5A  
TO-39  
TO-92  
60V  
8.0Ω  
VN1306N2  
7
100V  
8.0Ω  
VN1310N3  
Advanced DMOS Technology  
Features  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Complementary N- and P-channel devices  
Package Options  
Applications  
Motor controls  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
G
S
G D  
D
S
BVDSS  
BVDGS  
± 20V  
TO-92  
TO-39  
Case: DRAIN  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
7-191  

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