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VN1210LP006 PDF预览

VN1210LP006

更新时间: 2024-11-11 13:19:39
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
2页 67K
描述
Small Signal Field-Effect Transistor, 0.18A I(D), 120V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VN1210LP006 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.82
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:120 V最大漏极电流 (ID):0.18 A
最大漏源导通电阻:10 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VN1210LP006 数据手册

 浏览型号VN1210LP006的Datasheet PDF文件第2页 

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Small Signal Field-Effect Transistor, 0.18A I(D), 120V, 1-Element, N-Channel, Silicon, Met
VN1210LP018 SUPERTEX

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Small Signal Field-Effect Transistor, 0.18A I(D), 120V, 1-Element, N-Channel, Silicon, Met