VN1206

更新时间： 2024-02-26 21:04:00

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	443K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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技术参数
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VN1206 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	包装说明：	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.67	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏源导通电阻：	0.3 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	75 pF
JESD-30 代码：	S-XUUC-N2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VN1206 数据手册

VN1206

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

TO-92

BV_DSS

R_DS(ON)

I_D(ON)

(min)

BV_DGS

(max)

120V

6.0Ω

1.0A

VN1206L

Features

Advanced DMOS Technology

❏

Free from secondary breakdown

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

High input impedance and high gain

Complementary N- and P-channel devices

Applications

❏

Motor controls

Converters

Package Option

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

S G D

TO-92

BV_DSS

BV_DGS

± 30V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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