Datasheet > VN0550

VN0550

更新时间： 2023-12-06 19:52:29

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	900K
描述
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-prove

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VN0550 数据手册

VN0550

N-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

The VN0550 Enhancement-mode (normally-off)

transistor uses a vertical DMOS structure and a

well-proven silicon-gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

• Low C_ISSand Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

Package Type

3-lead TO-92

(Top view)

DRAIN

SOURCE

GATE

See Table 3-1 for pin information.

 2018 Microchip Technology Inc.

DS20005978A-page 1

12 3 4 5 6 7...14

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与VN0550相关器件

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VN0550_07	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
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VN0550N3	SUPERTEX	N-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
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VN0550N3-GP003	SUPERTEX	Small Signal Field-Effect Transistor, 0.05A I(D), 500V, 1-Element, N-Channel, Silicon, Met	获取价格