VN05

更新时间： 2024-11-10 22:41:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		继电器固态继电器
页数	文件大小	规格书
10页	231K
描述
HIGH SIDE SMART POWER SOLID STATE RELAY

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中文翻译

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数据手册

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VN05 数据手册

VN05H

HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE

V_DSS

R_DS(on

)

I_OUT

V_CC

VN05H

60 V

0.18 Ω

12 A

36 V

■

OUTPUT CURRENT (CONTINUOUS):

12A @ T_c=25^oC

■

LOGIC LEVEL 5V COMPATIBLE INPUT

THERMAL SHUT-DOWN

UNDER VOLTAGE SHUT-DOWN

OPEN DRAIN DIAGNOSTIC OUTPUT

VERY LOW STAND-BY POWER

DISSIPATION

PENTAWATT

(vertical)

PENTAWATT

(horizontal)

DESCRIPTION

The VN05H is a monolithic devices made using

SGS-THOMSON Vertical Intelligent Power

Technology, intended for driving resistive or

inductive loads with one side grounded.

PENTAWATT

(in-line)

Built-in thermal shut-down protects the chip from

over temperature and short circuit.

The input control is 5V logic level compatible.

The open drain diagnostic output indicates open

circuit (no load) and over temperature status.

ORDER CODES:

PENTAWATT vertical

PENTAWATT horizontal

PENTAWATT in-line

VN050H

VN050H(011Y)

VN050H(012Y)

BLOCK DIAGRAM

1/10

July 1998

12 3 4 5 6 7...10

中文翻译

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与VN05相关器件

型号	品牌	获取价格	描述	数据表
VN050H	STMICROELECTRONICS	获取价格	HIGH SIDE SMART POWER SOLID STATE RELAY
VN050H(011Y)	STMICROELECTRONICS	获取价格	HIGH SIDE SMART POWER SOLID STATE RELAY
VN050H(012Y)	STMICROELECTRONICS	获取价格	HIGH SIDE SMART POWER SOLID STATE RELAY
VN050H011Y	STMICROELECTRONICS	获取价格	HIGH SIDE SMART POWER SOLID STATE RELAY
VN050H012Y	STMICROELECTRONICS	获取价格	HIGH SIDE SMART POWER SOLID STATE RELAY
VN0535N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.25A I(D), 350V, 1-Element, N-Channel, Silicon, Met
VN0535N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 350V, 1-Element, N-Channel, Silicon, Meta
VN0535N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 350V, 1-Element, N-Channel, Silicon, Meta
VN0535N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 350V, 1-Element, N-Channel, Silicon, Meta
VN0535N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 350V, 1-Element, N-Channel, Silicon, Meta