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VN02HSP13TR PDF预览

VN02HSP13TR

更新时间: 2024-11-20 22:41:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路继电器固态继电器光电二极管
页数 文件大小 规格书
8页 183K
描述
HIGH SIDE SMART POWER SOLID STATE RELAY

VN02HSP13TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:POWER, SO-10针数:10
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.51
Is Samacsys:N内置保护:OVER CURRENT; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PDSO-G10JESD-609代码:e3
长度:9.4 mm功能数量:1
端子数量:10输出电流流向:SOURCE
最大输出电流:3 A标称输出峰值电流:0.9 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP10,.55FL封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:9/36 V认证状态:Not Qualified
座面最大高度:3.75 mm子类别:Peripheral Drivers
最大供电电压:36 V最小供电电压:5 V
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:30 µs接通时间:20 µs
宽度:7.5 mmBase Number Matches:1

VN02HSP13TR 数据手册

 浏览型号VN02HSP13TR的Datasheet PDF文件第2页浏览型号VN02HSP13TR的Datasheet PDF文件第3页浏览型号VN02HSP13TR的Datasheet PDF文件第4页浏览型号VN02HSP13TR的Datasheet PDF文件第5页浏览型号VN02HSP13TR的Datasheet PDF文件第6页浏览型号VN02HSP13TR的Datasheet PDF文件第7页 
VN02HSP  
®
HIGH SIDE SMART POWER SOLID STATE RELAY  
TYPE  
VDSS  
RDS(on  
)
IOUT  
VCC  
VN02HSP  
60 V  
0.4 Ω  
6 A  
36 V  
OUTPUT CURRENT (CONTINUOUS):  
6A @ Tc=25oC  
5V LOGIC LEVEL COMPATIBLE INPUT  
THERMAL SHUT-DOWN  
UNDER VOLTAGE SHUT-DOWN  
OPEN DRAIN DIAGNOSTIC OUTPUT  
VERY LOW STAND-BY POWER  
DISSIPATION  
10  
1
DESCRIPTION  
The VN02HSP is a monolithic devices made  
using STMicroelectronics VIPower Technology,  
intended for driving resistive or inductive loads  
with one side grounded.  
PowerSO-10  
Built-in thermal shut-down protects the chip from  
over temperature and short circuit.  
The input control is 5V logic level compatible.  
The open drain diagnostic output indicates open  
circuit (no load) and over temperature status.  
BLOCK DIAGRAM  
1/8  
August 1998  

VN02HSP13TR 替代型号

型号 品牌 替代类型 描述 数据表
VN02HSP STMICROELECTRONICS

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HIGH SIDE SMART POWER SOLID STATE RELAY

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