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VLZ30B/GS18 PDF预览

VLZ30B/GS18

更新时间: 2024-11-20 19:42:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 130K
描述
DIODE 30 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, ROHS COMPLIANT, QUADROMELF-2, Voltage Regulator Diode

VLZ30B/GS18 技术参数

生命周期:Active零件包装代码:MELF
包装说明:ROHS COMPLIANT, QUADROMELF-2针数:2
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

VLZ30B/GS18 数据手册

 浏览型号VLZ30B/GS18的Datasheet PDF文件第2页浏览型号VLZ30B/GS18的Datasheet PDF文件第3页浏览型号VLZ30B/GS18的Datasheet PDF文件第4页浏览型号VLZ30B/GS18的Datasheet PDF文件第5页浏览型号VLZ30B/GS18的Datasheet PDF文件第6页浏览型号VLZ30B/GS18的Datasheet PDF文件第7页 
VLZ-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Very sharp reverse characteristic  
• Low reverse current level  
• Very high stability  
• Low noise  
• High reliability  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
9612009  
Applications  
• Voltage stabilization  
Mechanical Data  
Case: QuadroMELF SOD-80  
Weight: approx. 34 mg  
Cathode band color: black  
Packaging codes/options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Ptot  
Value  
500  
Unit  
mW  
mA  
°C  
RthJA 300 K/W  
Power dissipation  
Z-current  
IZ  
Tj  
Ptot/VZ  
Junction temperature  
Storage temperature range  
175  
Tstg  
- 65 to + 175  
°C  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
500  
Unit  
K/W  
Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
1.5  
Unit  
V
IF = 200 mA  
Forward voltage  
Document Number 81759  
Rev. 1.1, 17-Oct-07  
www.vishay.com  
1

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