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VLZ11B PDF预览

VLZ11B

更新时间: 2024-11-23 05:53:23
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试
页数 文件大小 规格书
8页 216K
描述
Small Signal Zener Diodes

VLZ11B 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:R-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.73
Is Samacsys:N其他特性:HIGH RELIABILITY, LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:R-LELF-R2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:RECTANGULAR
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
标称参考电压:11 V表面贴装:YES
技术:ZENER端子形式:WRAP AROUND
端子位置:END最大电压容差:2.55%
工作测试电流:20 mABase Number Matches:1

VLZ11B 数据手册

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VLZ-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Very sharp reverse characteristic  
• Low reverse current level  
• Very high stability  
• Low noise  
e2  
• High reliability  
• Lead (Pb)-free component  
9612009  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
• Voltage stabilization  
Mechanical Data  
Case: QuadroMELF glass case SOD80  
Weight: approx. 34 mg  
Cathode band color: black  
Packaging codes/options:  
GS18/10 k per 13" reel (8 mm tape), 10 k/box  
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Ptot  
Value  
500  
Unit  
mW  
mA  
°C  
RthJA 300 K/W  
Power dissipation  
Z-current  
IZ  
Tj  
Ptot/VZ  
Junction temperature  
Storage temperature range  
175  
Tstg  
- 65 to + 175  
°C  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
500  
Unit  
K/W  
Junction to ambient air on PC board 50 mm x 50 mm x 1.6 mm  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
VF  
Min  
Typ.  
Max  
1.5  
Unit  
V
IF = 200 mA  
Forward voltage  
Document Number 81759  
Rev. 1.0, 15-Aug-07  
www.vishay.com  
1

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