5秒后页面跳转
VLB70-12S PDF预览

VLB70-12S

更新时间: 2024-11-28 22:15:47
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器
页数 文件大小 规格书
1页 20K
描述
NPN SILICON RF POWER TRANSISTOR

VLB70-12S 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-XRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.61
Is Samacsys:N外壳连接:EMITTER
最大集电极电流 (IC):12 A基于收集器的最大容量:270 pF
集电极-发射极最大电压:18 V配置:SINGLE
最小直流电流增益 (hFE):10最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:O-XRPM-F4元件数量:1
端子数量:4最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):183 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

VLB70-12S 数据手册

  
VLB70-12S  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L STUD  
The ASI VLB70-12S is Designed for  
A
.112x45°  
B
FEATURES:  
·
ØC  
·
· Omnigold™ Metalization System  
I
D
H
J
MAXIMUM RATINGS  
G
#8-32 UNC-2A  
F
IC  
12.0 A  
36 V  
E
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
18 V  
A
B
C
D
E
F
G
H
I
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
3.5 V  
183 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
1.05 OC/W  
TSTG  
qJC  
J
ORDER CODE: ASI12738  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 100 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 15 V  
VCE = 5.0 V  
36  
36  
18  
3.5  
V
BVCES  
BVCEO  
BVEBO  
ICES  
V
V
V
10  
---  
mA  
---  
hFE  
IC = 5.0 A  
10  
COB  
VCB = 12.5 V  
MHz  
f = 1.0  
270  
pF  
10  
GP  
dB  
%
VCE = 12.5 V  
POUT = 70 W  
f = 50 MHz  
60  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

与VLB70-12S相关器件

型号 品牌 获取价格 描述 数据表
VLB7029036EG000050 PLETRONICS

获取价格

3.3 V LVDS VCXO Oscillators
VLB7029036EG000050-312.5M-T1K PLETRONICS

获取价格

LVDS Output Clock Oscillator,
VLB7029036EG000050-312.5M-T250 PLETRONICS

获取价格

LVDS Output Clock Oscillator,
VLB7029036EG000050-FREQ-T1K PLETRONICS

获取价格

LVDS Output Clock Oscillator, 10.9MHz Min, 670MHz Max, ROHS COMPLIANT PACKAGE-6
VLB7029036EG000050-FREQ-T250 PLETRONICS

获取价格

LVDS Output Clock Oscillator, 10.9MHz Min, 670MHz Max, ROHS COMPLIANT PACKAGE-6
VLB7029036EG000050-FREQ-T500 PLETRONICS

获取价格

LVDS Output Clock Oscillator, 10.9MHz Min, 670MHz Max, ROHS COMPLIANT PACKAGE-6
VLB7029036EG250050-10.9M-T1K PLETRONICS

获取价格

LVDS Output Clock Oscillator,
VLB7029036EG250050-10.9M-T250 PLETRONICS

获取价格

LVDS Output Clock Oscillator,
VLB7029036EG250050-670.0M-T250 PLETRONICS

获取价格

LVDS Output Clock Oscillator,
VLB7029036LK000050 PLETRONICS

获取价格

3.3 V LVDS VCXO Oscillators