Datasheet > VLB40-12F_07

VLB40-12F_07

更新时间： 2022-09-12 10:51:46

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	35K
描述
NPN SILICON RF POWER TRANSISTOR

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VLB40-12F_07 数据手册

VLB40-12F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI VLB40-12F is a common

Emitter transistor, designed for VHF

FM amplifier operations in military,

commercial and amateur

communication equipment.

PACKAGE STYLE .380 4L FLG

FEATURES:

.112 x 45°

Ø.125 NOM.

FULL R

• P_G= 13 dB min. at 40 W/50 MHz

• Omnigold™ Metalization System

.125

MAXIMUM RATINGS

I_C

1.0 A

36 V

V_CBO

V_CEO

V_CES

V_EBO

P_DISS

T_J

18 V

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.785 / 19.94

.720 / 18.29

.970 / 24.64

.230 / 5.84

36 V

.730 / 18.54

.980 / 24.89

.385 / 9.78

.006 / 0.15

.105 / 2.67

.180 / 4.57

.280 / 7.11

.255 / 6.48

4.0 V

70 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

2.5 °C/W

.004 / 0.10

.085 / 2.16

.160 / 4.06

T_STG

θ_JC

.240 / 6.10

ORDER CODE: ASI10735

CHARACTERISTICS T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 200 mA

I_E= 10 mA

V_CB= 30 V

V_CE= 5.0 V

4.0

BV_CES

BV_CBO

BV_EBO

I_CBO

1.0

---

h_FE

I_C= 200 mA

P_OUT= 40 W

5.0

C_OB

V_CB= 12.5 V

V_CC= 12.5 V

f = 1.0 MHz

f = 50 MHz

100

G_P

η_C

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. C

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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