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VLB40-12F PDF预览

VLB40-12F

更新时间: 2024-01-21 11:07:27
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

VLB40-12F 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.61
外壳连接:EMITTER最大集电极电流 (IC):1 A
基于收集器的最大容量:100 pF集电极-发射极最大电压:35 V
配置:SINGLE最小直流电流增益 (hFE):10
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

VLB40-12F 数据手册

  
VLB40-12F  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
PACKAGE STYLE .380 4L FLG  
The ASI VLB40-12F is Designed for  
.112 x 45°  
B
A
FEATURES:  
Ø.125 NOM.  
FULL R  
·
J
.125  
·
· Omnigold™ Metalization System  
C
D
E
F
MAXIMUM RATINGS  
I
H
G
5.0 A  
36 V  
IC  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
VCBO  
VCEO  
VEBO  
PDISS  
TJ  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
18 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
4.0 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
70 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
2.5 OC/W  
.240 / 6.10  
J
TSTG  
qJC  
ORDER CODE: ASI10735  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCBO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 50 mA  
IC = 50 mA  
IC = 50 mA  
IE = 10 mA  
VCE = 12.5 V  
VCE = 5.0 V  
36  
36  
18  
4.0  
V
BVCES  
BVCEO  
BVEBO  
ICES  
V
V
V
5.0  
mA  
---  
hFE  
IC = 5.0 A  
20  
13  
200  
COB  
VCB = 12.5 V  
VCC = 12.5 V  
f = 1.0 MHz  
f = 50 MHz  
100  
pF  
GP  
dB  
%
POUT = 40 W  
hC  
60  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change wiothout notice.  

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