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VLB10-12S PDF预览

VLB10-12S

更新时间: 2024-11-24 08:19:35
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

VLB10-12S 技术参数

生命周期:Active包装说明:POST/STUD MOUNT, O-CRPM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.6
外壳连接:EMITTER最大集电极电流 (IC):2 A
基于收集器的最大容量:65 pF集电极-发射极最大电压:18 V
配置:SINGLE最小直流电流增益 (hFE):5
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:POST/STUD MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

VLB10-12S 数据手册

  
VLB10-12S  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI VLB10-12S is Designed for  
12.5 V, Large Signal Class C Amplifier  
Applications up to 50 MHz.  
PACKAGE STYLE .380 4L STUD  
A
.112x45°  
FEATURES:  
C
B
Common Emitter  
PG = 16 dB at 10 W/50 MHz  
Omnigold™ Metalization System  
E
E
ØC  
B
I
D
H
MAXIMUM RATINGS  
J
2.0 A  
36 V  
G
IC  
#8-32 UNC-2A  
F
E
VCBO  
VCES  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
36 V  
.220 / 5.59  
.980 / 24.89  
.370 / 9.40  
.004 / 0.10  
.320 / 8.13  
.100 / 2.54  
.450 / 11.43  
.090 / 2.29  
.155 / 3.94  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
4.0 V  
.385 / 9.78  
.007 / 0.18  
.330 / 8.38  
.130 / 3.30  
.490 / 12.45  
.100 / 2.54  
.175 / 4.45  
.750 / 19.05  
35 W @ TC = 25 °C  
-65 °C to +200 °C  
-65 °C to +150 °C  
5.0 °C/W  
TSTG  
θJC  
J
ORDER CODE: ASI10734  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 15 mA  
IC = 50 mA  
IE = 2.5 mA  
VCB = 15 V  
18  
V
36  
BVCES  
BVEBO  
ICBO  
V
4.0  
V
5.0  
mA  
---  
V
CE = 5.0 V  
IC = 250 mA  
POUT = 10 W  
5.0  
200  
hFE  
VCB = 15 V  
f = 1.0 MHz  
f = 50 MHz  
65  
COB  
pF  
16  
60  
PG  
dB  
%
VCC = 12.5 V  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. B  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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