5秒后页面跳转
VLB10-12F PDF预览

VLB10-12F

更新时间: 2024-11-23 22:15:47
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

VLB10-12F 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.6
外壳连接:EMITTER最大集电极电流 (IC):2 A
基于收集器的最大容量:65 pF集电极-发射极最大电压:18 V
配置:SINGLE最小直流电流增益 (hFE):5
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:O-CRFM-F4
元件数量:1端子数量:4
最高工作温度:200 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

VLB10-12F 数据手册

  
VLB10-12F  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI VLB10-12F is Designed for  
PACKAGE STYLE .380 4L FLG  
FEATURES:  
.112 x 45°  
B
A
·
Ø.125 NOM.  
FULL R  
·
J
· Omnigold™ Metalization System  
.125  
C
D
E
MAXIMUM RATINGS  
F
2.0 A  
36 V  
IC  
I
H
G
VCBO  
VCEO  
VCES  
VEBO  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
18 V  
.220 / 5.59  
.785 / 19.94  
.720 / 18.29  
.970 / 24.64  
.230 / 5.84  
A
B
C
D
E
F
G
H
I
36 V  
.730 / 18.54  
.980 / 24.89  
.385 / 9.78  
.006 / 0.15  
.105 / 2.67  
.180 / 4.57  
.280 / 7.11  
.255 / 6.48  
4.0 V  
.004 / 0.10  
.085 / 2.16  
.160 / 4.06  
20 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +150 OC  
5.0 OC/W  
.240 / 6.10  
J
TSTG  
qJC  
ORDER CODE: ASI10732  
CHARACTERISTICS TC = 25 OC  
SYMBOL  
BVCEO  
NONETEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 15 mA  
IC = 50 mA  
IE = 2.5 mA  
VCB = 12.5 V  
VCE = 5.0 V  
18  
V
BVCES  
BVEBO  
ICBO  
36  
V
4.0  
V
1.0  
mA  
---  
hFE  
IC = 250 mA  
POUT = 10 W  
5.0  
16  
200  
COB  
VCB = 12.5 V  
VCC = 12.5 V  
f = 1.0 MHz  
f = 50 MHz  
65  
pF  
PG  
dB  
%
60  
hC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004  
1/1  
Specifications are subject to change without notice.  

与VLB10-12F相关器件

型号 品牌 获取价格 描述 数据表
VLB10-12F_07 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
VLB10-12S ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
VLB10-12S_07 ASI

获取价格

NPN SILICON RF POWER TRANSISTOR
VLB1050 TEMEX

获取价格

Voltage Controlled Oscillator, 1050MHz Min, 1500MHz Max
VLB1051 TEMEX

获取价格

Voltage Controlled Oscillator, 1050MHz Min, 1200MHz Max
VLB1052 TEMEX

获取价格

Voltage Controlled Oscillator, 1050MHz Min, 1085MHz Max
VLB1068-RF TEMEX

获取价格

Voltage Controlled Oscillator, 1050MHz Min, 1086MHz Max
VLB1130 TEMEX

获取价格

VCO, 1130 MHz - 1165 MHz
VLB1134 TEMEX

获取价格

Voltage Controlled Oscillator, 1133MHz Min, 1168MHz Max
VLB11L0B-A9C00-000 Carling Technologies

获取价格

Rocker Switch, DPDT, (on)-off-(on), Momentary, 15A, 24VDC, Quick Connect Terminal, Rocker