Datasheet > VIT30L60C-E3

VIT30L60C-E3

更新时间： 2024-11-28 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	128K
描述
Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5.0 A

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VIT30L60C-E3 数据手册

VT30L60C-E3, VIT30L60C-E3

www.vishay.com

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low VF = 0.32 V at IF = 5.0 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

VT30L60C

VIT30L60C

PIN 1

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, and commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

60 V

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_FSM

200 A

0.45 V

150 °C

V_Fat I_F= 15 A

T_Jmax.

Polarity: As marked

Package

TO-220AB, TO-262AA

Common cathode

Mounting Torque: 10 in-lbs maximum

Diode variation

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT30L60C

VIT30L60C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

I_FSM

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

200

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

-40 to +150

Revision: 15-Dec-16

Document Number: 89380

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VIT30L60C-E3相关器件

型号	品牌	获取价格	描述	数据表
VIT30L60C-E3/4W	VISHAY	获取价格	DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA, ROHS COMPLIANT, PLASTIC PACKAGE-3, R
VIT30L60C-E3-4W	VISHAY	获取价格	Dual Trench MOS Barrier Schottky Rectifier
VIT30L60CHM3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VIT30L60C-M3/4W	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VIT-3H180AB	VISHAY	获取价格	CAPACITOR, VARIABLE, CERAMIC-MULTILAYER, 25V, 2.5pF - 10pF, VERTICAL ADJUSTER, THROUGH HOL
VIT3P28H3U750C1	VICOR	获取价格	符合 VITA 62 标准的电源转换器
VIT4045C	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT4045CHM3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT4045CHM3/4W	VISHAY	获取价格	DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLA
VIT4045C-M3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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