Datasheet > VIT2045CBP

VIT2045CBP

更新时间： 2024-11-25 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	131K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 5.0 A

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VIT2045CBP 数据手册

VT2045CBP, VIT2045CBP

Vishay General Semiconductor

www.vishay.com

Trench MOS Barrier Schottky Rectifier

for PV Solar Cell Bypass Protection

Ultra Low V_F= 0.33 V at I_F= 5.0 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• T_J200 °C max. in solar bypass mode application

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

VT2045CBP

VIT2045CBP

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

PIN 1

PIN 2

PIN 1

PIN 2

CASE

PIN 3

PRIMARY CHARACTERISTICS

MECHANICAL DATA

I_F(AV)

2 x 10 A

45 V

Case: TO-220AB, TO-262AA

Molding compound meets UL 94 V-0 flammability rating

V_RRM

Base P/N-M3

- halogen-free, RoHS-compliant, and

I_FSM

160 A

commercial grade

V_Fat I_F= 10 A

T_OPmax. (AC mode)

T_Jmax. (DC forward current)

0.41 V

150 °C

200 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Package

TO-220AB, TO-262AA

Dual common cathode

Mounting Torque: 10 in-lbs maximum

Diode variation

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT2045CBP

VIT2045CBP

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

(1)

Maximum average forward rectified current (fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

I_FSM

160

Operating junction and storage temperature range (AC mode)

T_OP, T_STG

-40 to +150

°C

Junction temperature in DC forward current

without reverse bias, t  1 h

(2)

T_J

 200

Notes

(1)

With heatsink

(2)

Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test

Revision: 15-Dec-16

Document Number: 89364

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

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与VIT2045CBP相关器件

型号	品牌	获取价格	描述	数据表
VIT2045CHM3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT2045CHM3/4W	VISHAY	获取价格	DIODE SCHOTTKY 20A 45V TO-262AA
VIT2045CHM3-4W	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT2045C-M3	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT2045C-M3/4W	VISHAY	获取价格	DIODE SCHOTTKY 20A 45V TO-262AA
VIT2045C-M3-4W	VISHAY	获取价格	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VIT2060C	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VIT2060C-E3/4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VIT2060CHM3-4W	VISHAY	获取价格	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VIT2060C-M3/4W	VISHAY	获取价格	DIODE 10 A, 60 V, SILICON, RECTIFIER DIODE, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, PLA

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