5秒后页面跳转
BZT52B3V6-V PDF预览

BZT52B3V6-V

更新时间: 2024-01-09 02:36:18
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
10页 262K
描述
Small Signal Zener Diodes

BZT52B3V6-V 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.65
二极管类型:ZENER DIODEJESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Matte Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BZT52B3V6-V 数据手册

 浏览型号BZT52B3V6-V的Datasheet PDF文件第2页浏览型号BZT52B3V6-V的Datasheet PDF文件第3页浏览型号BZT52B3V6-V的Datasheet PDF文件第4页浏览型号BZT52B3V6-V的Datasheet PDF文件第5页浏览型号BZT52B3V6-V的Datasheet PDF文件第6页浏览型号BZT52B3V6-V的Datasheet PDF文件第7页 
BZT52-V-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type des-  
e3  
ignation BZX84 series, the dual zener diode com-  
mon anode configuration in the SOT-23 case with  
type designation AZ23 series and the dual zener  
diode common cathode configuration in the SOT-  
23 case with type designation DZ23 series.  
17431  
• The Zener voltages are graded according to the  
international E 24 standard.  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123 Plastic case  
Weight: approx. 9.3 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table "  
Characteristics "  
5002)  
4101)  
Power dissipation  
Power dissipation  
Ptot  
Ptot  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
3001)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
Junction temperature  
TJ  
150  
°C  
°C  
Storage temperature range  
TS  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
Document Number 85760  
Rev. 1.5, 21-Apr-05  
www.vishay.com  
1

与BZT52B3V6-V相关器件

型号 品牌 描述 获取价格 数据表
BZT52B3V6-V-G VISHAY 暂无描述

获取价格

BZT52B3V6-V-G08 VISHAY DIODE 3.6 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Vol

获取价格

BZT52B3V6-V-G18 VISHAY DIODE 3.6 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Vol

获取价格

BZT52B3V9 DIOTEC Surface mount Silicon Planar Zener Diodes

获取价格

BZT52B3V9 WEITRON Surface Mount Zener Diodes

获取价格

BZT52B3V9 TAYCHIPST Small Signal Diode

获取价格