BZD27C3V6P to BZD27C200P
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Sillicon Planar Zener Diodes
• Low profile surface-mount package
• Zener and surge current specification
• Low leakage current
e3
17249
• Excellent stability
• High temperature soldering:
260 °C/10 sec. at terminals
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Packaging codes/options:
GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box
GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box
Mechanical Data
Case: JEDEC DO-219AB (SMF ) Plastic case
Weight: approx. 15 mg
®
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Power dissipation
Test condition
TL = 80 °C
A = 25 °C
Symbol
Ptot
Value
2.3
Unit
W
0.81)
300
T
Ptot
W
W
100 µs square pulse2)
Non-repetitive peak pulse power
dissipation
PZSM
10/1000 µs waveform (BZD27-
C7V5P to BZD27-C100P)2)
10/1000 µs waveform (BZD27-
C110P to BZD27-C200P)2)
PRSM
PRSM
150
100
W
W
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
2) TJ = 25 °C prior to surge
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
RthJA
Value
180
Unit
K/W
Thermal resistance junction to ambient air1)
Thermal resistance junction to lead
RthJL
Tj
30
150
K/W
°C
Maximum junction temperature
Storage temperature range
TS
- 55 to + 150
°C
1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick)
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
IF = 0.2 A
Symbol
VF
Min
Typ.
Max
1.2
Unit
V
Document Number 85810
Rev. 1.8, 13-Apr-05
www.vishay.com
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