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BZD27C13P-M PDF预览

BZD27C13P-M

更新时间: 2024-01-27 08:49:21
品牌 Logo 应用领域
威世 - VISHAY 稳压二极管齐纳二极管测试光电二极管
页数 文件大小 规格书
7页 112K
描述
Zener Diodes with Surge Current Specification

BZD27C13P-M 技术参数

生命周期:Obsolete包装说明:O-LELF-R2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:2.3 W认证状态:Not Qualified
标称参考电压:13 V最大反向电流:2 µA
表面贴装:YES技术:ZENER
端子形式:WRAP AROUND端子位置:END
电压温度Coeff-Max:13 mV/ °C工作测试电流:50 mA
Base Number Matches:1

BZD27C13P-M 数据手册

 浏览型号BZD27C13P-M的Datasheet PDF文件第2页浏览型号BZD27C13P-M的Datasheet PDF文件第3页浏览型号BZD27C13P-M的Datasheet PDF文件第4页浏览型号BZD27C13P-M的Datasheet PDF文件第5页浏览型号BZD27C13P-M的Datasheet PDF文件第6页浏览型号BZD27C13P-M的Datasheet PDF文件第7页 
BZD27C3V6P-M to BZD27C200P-M  
www.vishay.com  
Vishay Semiconductors  
Zener Diodes with Surge Current Specification  
FEATURES  
• Sillicon planar Zener diodes  
• Low profile surface-mount package  
• Zener and surge current specification  
• Low leakage current  
• Excellent stability  
• High temperature soldering: 260 °C/10 s at  
terminals  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
• Halogen-free according to IEC 61249-2-21 definition  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
3.6 to 200  
5 to 100  
UNIT  
V
mA  
Pulse current  
Single  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZD27C3V6P-M to  
BZD27C200P-M  
BZD27C3V6P-M to  
BZD27C200P-M-series-08  
3000 per 7" reel (8mm tape)  
15 000/box  
BZD27C3V6P-M to  
BZD27C200P-M  
BZD27C3V6P-M to  
BZD27C200P-M-series-18  
10 000 per 13" reel (8 mm tape)  
10 000/box  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
15 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
DO-219AB (SMF)  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
TL = 80 °C  
SYMBOL  
Ptot  
VALUE  
UNIT  
mW  
mW  
W
2300  
800  
Power dissipation  
TA = 25 °C (1)  
Ptot  
100 μs square pulse  
PZSM  
300  
10/1000 μs waveform  
(BZD27-C7V5P-M to BZD27-C100P-M)  
10/1000 μs waveform  
Non repetitive peak surge power  
dissipation (2)  
PRSM  
150  
W
PRSM  
RthJL  
100  
30  
W
(BZD27-C110P-M to BZD27-C200P-M)  
Junction to lead  
K/W  
Mounted on epoxy-glass PCB with 3 mm x  
Junction to ambient air  
RthJA  
180  
K/W  
3 mm Cu pads (40 μm thick)  
Junction temperature  
Tj  
150  
°C  
°C  
Storage temperature range  
Tstg  
- 55 to + 150  
Notes  
(1)  
Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads (40 μm thick)  
TJ = 25 °C prior to surge  
(2)  
Rev. 1.2, 29-Nov-11  
Document Number: 83307  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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