是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 6.87 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/240939.1.1.png | Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=240939 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=240939 | 3D View: | https://componentsearchengine.com/viewer/3D.php?partID=240939 |
Samacsys PartID: | 240939 | Samacsys Image: | https://componentsearchengine.com/Images/9/2N7002E-T1-E3.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/1/2N7002E-T1-E3.jpg | Samacsys Pin Count: | 3 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | SOT23 (3-Pin) |
Samacsys Footprint Name: | SOT-23 (TO-236) | Samacsys Released Date: | 2016-03-10 07:32:26 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (Abs) (ID): | 0.24 A |
最大漏极电流 (ID): | 0.24 A | 最大漏源导通电阻: | 3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N7002ET1G | ONSEMI | Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 |
获取价格 |
|
2N7002E-T1-GE3 | VISHAY | N-Channel 60 V (D-S) MOSFET |
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|
2N7002ET3G | ONSEMI | Small Signal MOSFET |
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|
2N7002F | NXP | TrenchMOS Logic Level FET |
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|
2N7002F2 | YANGJIE | Small Signal Field-Effect Transistor, 0.34A I(D), 60V, 1-Element, N-Channel, Silicon, Meta |
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|
2N7002F215 | NXP | N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench |
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