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2N7002E-T1-E3 PDF预览

2N7002E-T1-E3

更新时间: 2024-01-04 19:04:25
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
8页 183K
描述
N-Channel 60 V (D-S) MOSFET

2N7002E-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:6.87
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/240939.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=240939
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=2409393D View:https://componentsearchengine.com/viewer/3D.php?partID=240939
Samacsys PartID:240939Samacsys Image:https://componentsearchengine.com/Images/9/2N7002E-T1-E3.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2N7002E-T1-E3.jpgSamacsys Pin Count:3
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236)Samacsys Released Date:2016-03-10 07:32:26
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.24 A
最大漏极电流 (ID):0.24 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002E-T1-E3 数据手册

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2N7002E  
Vishay Siliconix  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
Definition  
Low On-Resistance: 3  
VDS (V)  
RDS(on) ()  
ID (mA)  
60  
3 at VGS = 10 V  
240  
Low Threshold: 2 V (typ.)  
Low Input Capacitance: 25 pF  
Fast Switching Speed: 7.5 ns  
Low Input and Output Leakage  
Compliant to RoHS Directive 2002/95/EC  
BENEFITS  
Low Offset Voltage  
TO-236  
(SOT-23)  
Low-Voltage Operation  
Easily Driven Without Buffer  
High-Speed Circuits  
Low Error Voltage  
Marking Code: 7E  
G
S
1
2
3
D
APPLICATIONS  
Direct Logic-Level Interface: TTL/CMOS  
Drivers: Relays, Solenoids, Lamps, Hammers, Display,  
Memories, Transistors, etc.  
Top View  
Battery Operated Systems  
Solid-State Relays  
Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free)  
2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
60  
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
TA = 25 °C  
TA = 70 °C  
240  
Continuous Drain Current (TJ = 150 °C)  
Pulsed Drain Currenta  
ID  
IDM  
PD  
190  
mA  
W
1300  
0.35  
TA = 25 °C  
TA = 70 °C  
Power Dissipation  
0.22  
RthJA  
Thermal Resistance, Junction-to-Ambient  
357  
°C/W  
°C  
T
J, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
Notes:  
a. Pulse width limited by maximum junction temperature.  
Document Number: 70860  
S11-0183-Rev. F, 07-Feb-11  
www.vishay.com  
1

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