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2N5566 PDF预览

2N5566

更新时间: 2024-02-03 18:55:34
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管
页数 文件大小 规格书
5页 49K
描述
Matched N-Channel JFET Pairs

2N5566 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-MBCY-W6Reach Compliance Code:unknown
风险等级:5.37Is Samacsys:N
配置:SEPARATE, 2 ELEMENTSFET 技术:JUNCTION
JEDEC-95代码:TO-71JESD-30 代码:O-MBCY-W6
JESD-609代码:e0元件数量:2
端子数量:6工作模式:DEPLETION MODE
最高工作温度:-888 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.325 W认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N5566 数据手册

 浏览型号2N5566的Datasheet PDF文件第2页浏览型号2N5566的Datasheet PDF文件第3页浏览型号2N5566的Datasheet PDF文件第4页浏览型号2N5566的Datasheet PDF文件第5页 
2N5564/5565/5566  
Vishay Siliconix  
Matched N-Channel JFET Pairs  
PRODUCT SUMMARY  
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV)  
2N5564  
2N5565  
2N5566  
–0.5 to –3  
–0.5 to –3  
–0.5 to –3  
–40  
–40  
–40  
7.5  
7.5  
7.5  
–3  
–3  
–3  
5
10  
20  
FEATURES  
BENEFITS  
APPLICATIONS  
D Two-Chip Design  
D Tight Differential Match vs. Current  
D Wideband Differential Amps  
D High Slew Rate  
D Improved Op Amp Speed, Settling Time  
D High-Speed,  
Accuracy  
Temp-Compensated,  
Single-Ended Input Amps  
D High-Speed Comparators  
D Impedance Converters  
D Matched Switches  
D Low Offset/Drift Voltage  
D Low Gate Leakage: 3 pA  
D Low Noise: 12 nV⁄√Hz @ 10 Hz  
D Good CMRR: 76 dB  
D Minimum Parasitics  
D Minimum Input Error/Trimming Requirement  
D Insignificant Signal Loss/Error Voltage  
D High System Sensitivity  
D Minimum Error with Large Input Signals  
D Maximum High Frequency Performance  
DESCRIPTION  
The 2N5564/5565/5566 are matched pairs of JFETs mounted  
in a TO-71 package. This two-chip design reduces parasitics  
for good performance at high frequency while ensuring  
The hermetically-sealed TO-71 package is available with full  
military processing (see Military Information).  
extremely tight matching.  
This series features high  
breakdown voltage (V(BR)DSS typically > 55 V), high gain  
(typically > 9 mS), and <5 mV offset between the two die.  
For similar products see the low-noise U/SST401 series, and  
the low-leakage 2N5196/5197/5198/5199 data sheets.  
TO-71  
S
G
2
1
1
3
6
4
D
1
D
2
2
5
G
1
S
2
Top View  
ABSOLUTE MAXIMUM RATINGS  
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40 V  
Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
a
Power Dissipation :  
Per Side . . . . . . . . . . . . . . . . . . . . . . . . 325 mW  
b
Total . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW  
Notes  
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C  
16  
a. Derate 2.6 mW/_C above 25_C  
b. Derate 5.2 mW/_C above 25_C  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C  
Document Number: 70254  
S-04031—Rev. D, 04-Jun-01  
www.vishay.com  
8-1  

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