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2N5461

更新时间: 2024-01-26 17:14:47
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管
页数 文件大小 规格书
5页 44K
描述
P-Channel JFETs

2N5461 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
风险等级:5.02其他特性:LOW NOISE
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):2 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2N5461 数据手册

 浏览型号2N5461的Datasheet PDF文件第2页浏览型号2N5461的Datasheet PDF文件第3页浏览型号2N5461的Datasheet PDF文件第4页浏览型号2N5461的Datasheet PDF文件第5页 
2N/SST5460 Series  
Vishay Siliconix  
P-Channel JFETs  
2N5460  
2N5461  
2N5462  
SST5460  
SST5461  
SST5462  
PRODUCT SUMMARY  
Part Number  
VGS(off) (V)  
V(BR)GSS Min (V)  
gfs Min (mS) IDSS Min (mA)  
2N/SST5460  
2N/SST5461  
2N/SST5462  
0.75 to 6  
1 to 7.5  
1.8 to 9  
40  
40  
40  
1
1.5  
2
–1  
–2  
–4  
FEATURES  
BENEFITS  
APPLICATIONS  
D High Input Impedance  
D Low Signal Loss/System Error  
D Low-Current, Low-Voltage Amplifiers  
D Very Low Noise  
D High System Sensitivity  
D High-Side Switching  
D High Gain: AV = 80 @ 20 mA  
D Low Capacitance: 1.2 pF Typical  
D High-Quality Low-Level Signal  
D Ultrahigh Input Impedance  
Amplification  
Pre-Amplifiers  
DESCRIPTION  
The 2N/SST5460 series are p-channel JFETs designed to  
provide all-around performance in a wide range of amplifier  
and analog switch applications.  
The 2N series, TO-226AA (TO-92), and SST series, TO-236  
(SOT-23), plastic packages provide low cost options, and are  
available in tape-and-reel for automated assembly, (see  
Packaging Information).  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
1
2
S
D
G
SST5460 (B0)*  
SST5461 (B1)*  
SST5462 (B2)*  
D
S
1
2
2N5460  
2N5461  
2N5462  
3
G
*Marking Code for TO-236  
3
Top View  
Top View  
ABSOLUTE MAXIMUM RATINGS  
1
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V  
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V  
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA  
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C  
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C  
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C  
16  
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW  
Notes  
a. Derate 2.8 mW/_C above 25_C  
Document Number: 70262  
S-04030—Rev. D, 04-Jun-01  
www.vishay.com  
9-1  

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